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Wafer Current Measurement (WCW is an emerging technique for in-line process monitoring. A Joint development project (JDP) has been conducted by Inftneon (Memory Development Center) and Applied Materials (Process Diagnostics and Control Group). The main goal of this project was development of applications for the WCM technique in Fob environment and spec9cally for state of the arl DRAMInftneon process. A new generation of SEM review tool with integrated FIB (Applied SEWision G2 FIB Defect Analysis system) was used for this work, A challenging layer approached in this work was the DTMO (Deep Trench Mask Open) which serves as a hard mask for subsequent deep trench (DT) capacitor formation in a silicon substrate. The aspect ratio of the openings in the DTMO layer can be as high as 20:I. As a result of the aggressive aspect ratio and sub-I00 nm CDs the only available techniques for evaluating DTMO under-etch and bottom CD violation are destructive analysis methodr. Afer demonstrating basic WCM based detection capabiliiy for nitride residual layer detection as well as for BSG under-etch the DTMO was approached and correlation of WCM readings to bottomhitride CDs (measured by DTMO cross-sectioning) was achieved. Currently. DTMO bottom CD can be precisely measured after DT etch only with unavoidable wafer scraping in case of CD violation. After showing of bottom CD sensitiviq using WCM etch chamber/tool matching feasibiliq was conducted, The motivation behind this is that chamber/tool matching is essential to shorten cycle time. Crucial yield limiting problems such as nitriddBSG underetch as well as bottom CD violation for DTMO layer can be revealed by the WCM in-line rather than by crosssectioning in failure analysis laboratory or DT mask wet etch followed by top CD measurement. I n production environment :he WCM technique is targeted for excursion control, early etch process drii warning, and potentially for closed loop process control in DTMO and otherprocess areas.

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As design rules in high-end photo-lithographic reticles become tighter, the monitoring of line-width variations becomes more vital in the quality control of advance reticle manufacturing processes. In this paper a new concept of operation is presented, for using an inspection tool in the monitoring of line-width variations for the purpose improving such quality control. The inspection tool used in this paper, is Orbot-Applied's RT8000ES Reticle Inspection tool, in which the newly developed Line Width Error Detector (LWED) is embedded.

In this paper the challenges of incorporating in-line FIB as process monitor will he discussed, for both process qualificaiion phase as well as production phose. Results of advanced FIB capobiliiies using Applied's SEWision G2FIB will be demonstrated on some of Infineon's most challenging process sieps, previously lacking in-line capahiliv. In addiiion, ihe efforts ond results of developing best known method (BKMs) for FIB milling, deposition techniques (capping, and imaging will be discussed and shown comparing resulis to iraditional lab profile measurement iechniques. INTRODUCTIONCross sectioning to reveal multi-layer images is a critical process diagnostics and metrology method used for process-integration analysis and optimization at development phase as well as process window monitoring during production. This is traditionally a task performed in the failure analysis lab. Sending a wafer to the lab for cross section analysis and metrology is time consuming and dictates scrapping of wafers sampled. Advance process requirements and methodology can benefit greatly by implementing in-line cross sectioning capabilities that will allow high volume multi-layer cross section analysis avoiding forfeiting entire wafer yield when sampled. This may be achieved by introducing advanced in-line defect analysis system combining defect review SEM with integrated Focused Ion Beam (FIB). This enables local cross sectioning on wafer surface abiding by requirements of minimal sacrificing of dies on wafer and thus allowing returning wafer to production.