The band-edge excitonic transitions of vertically aligned and tilted ZnO nanorods on sapphire have been characterized using thermoreflectance (TR) measurements in the temperature range between 30 and 300 K. The TR spectra of the nanorods with largely {0001} planes show considerable difference in energy and line shape with respect to those of the other sample with largely side planes of {1010}. The TR result at each temperature clearly indicates the band-edge excitons (A, B, and C) measured from the largely {0001} planes of the rods are lower in energy with respect to those obtained from the other sample dominated by the side planes of {1010}. Optical anisotropy in the transition amplitudes of the TR spectra for the vertically aligned and tilted ZnO nanorods is observed. The TR is shown to be very sensitive to the detection of the ZnO nanorods' alignment.

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This paper discusses a newly developed 0.25m GaN on SiC foundry process technology to support discrete and MMIC applications extending from L-through X-band. The GaN HEMT technology is based on high-throughput and lowcost i-line photolithographic tools and on large-diameter 100mm SiC substrates. The technology supports applications utilizing supply voltages up to 28V with power density of 4W/mm, PAE of 45%, and large signal linear gain of 15dB at 10GHz based on onwafer measurements without harmonic terminations.

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