Pure Play GaN Foundry 0.25&amp;#181;m HEMT Technology for RF Applications

Weng, Ming Hung; Lin, Che-Kai; Du, Jhih-Han; Wang, Wei-Chou; Wang, Wenkai; Wohlmuth, W.

doi:10.1109/csics.2013.6659243

Cited by 9 publications

(8 citation statements)

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“…23 (a)) [121], WIN semiconductors' reliable 50V GaN technology (see Fig. 23 (b)) [122], Raytheon's high power density microwave GaN technology [123], and Qorvo's 0.15µm GaN MMIC Manufacturing Technology [124].…”

Section: Gate/source Field Platementioning

confidence: 99%

“…A novel source-connected air-bridge self-aligned recess field plate is used in Dynax Semiconductor recently to achieve better RF performance and current collapse immunity[120]. The field plate structure is found in many products for RF application, i. e. NXP 0.4µm GaN HEMT (see Fig.23 (a))[121], WIN semiconductors' reliable 50V GaN technology (see Fig.23 (b))[122], Raytheon's high power density microwave GaN technology[123], and Qorvo's 0.15µm GaN MMIC Manufacturing Technology[124].…”

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confidence: 99%

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An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

et al. 2022

IEEE Access

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Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high power and high frequency applications. However, the existence of damages, defects and dislocations still degrade the device features because of trapping effects. In this paper, investigations of trapping effects are summarized and discussed to understand the inner mechanism, including the gate-lag and drain-lag transient responses, the current collapse of pulsed I DS -V DS , the dependence of frequency dispersion, the transient current reduction with pulsed-RF excitation and the kink effect. In addition, recent methods of suppressing trapping effects are reviewed, including surface passivation, GaN cap layer, gate/source field plate, buffer engineering and structure modification. The profits and shortages of each method are compared and discussed.INDEX TERMS GaN HEMT, trapping effects, current collapse, suppression methods.

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Section: Gate/source Field Platementioning

confidence: 99%

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confidence: 99%

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

et al. 2022

IEEE Access

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“…The Au-metal layers consist of 0.6-μm MET0, 1.1-μm SFP, 1.1-μm MET1, and 4-μm MET2. The MET2 layer fulfills global interconnects to obtain low resistivity and high current handling capacity [ 21 , 22 ].…”

Section: Gan Hemt Technology and Characteristicsmentioning

confidence: 99%

“…Hence, the process design kit (PDK) models are accurate for our design in sub-6-GHz. The reliability information of the process can be referred to in [ 21 ].…”

Section: Gan Hemt Technology and Characteristicsmentioning

confidence: 99%

A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications

Liao²,

Zhang³

et al. 2022

Micromachines

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The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical role in RF transmit/receive (T/R) modules of phased array radar systems, mobile communication systems and satellite systems. Over recent years, there has been an increasing requirement to develop wideband high-efficiency MMIC high power amplifiers (HPAs) to accommodate wideband operation and reduce power consumption. This paper presents a wideband high efficiency MMIC HPA for Sub-6-GHz applications using a 0.25-μm gate-length D-mode GaN/SiC high electron mobility transistor (HEMT) process. The amplifier consists of two stages with two HEMT cells for the driver stage and eight HEMT cells for the power stage. To obtain a flat gain while maintaining the wideband characteristic, a gain equalization technique is employed in the inter-stage matching circuit. Meanwhile, a low-loss output matching network is utilized to ensure high efficiency. The fabricated HPA occupies a compact chip area of 14.35 mm2 including testing pads. Over the frequency range of 2–6 GHz, measured results of this HPA show a saturated continuous wave (CW) output power of 44.4–45.2 dBm, a power added efficiency (PAE) of 35.8–51.3%, a small signal gain of 24–25.5 dB, and maximum input and output return losses of 14.5 and 10 dB, respectively.

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“…The AFRL GaN MMIC process developed from the previous device level efforts supports high efficiency and broadband operation from 0 -40 GHz [13], [14]. Many known manufacturing processes to date use some form of dielectric etch to define gate openings [15], [16]. The process reported here uses a gate-first process to avoid dry-etch damage under the gate which can alter threshold voltage and impact frequency dispersion [17].…”

Section: Introductionmentioning

confidence: 99%

Implementation of High-Power-Density <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

Fitch

Walker

Green

et al. 2015

IEEE Electron Device Lett.

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A GaN high electron mobility transistor monolithic microwave integrated circuit (MMIC) designer typically has to choose a device design either for high-gain millimeter-wave operation with a short gate length, or for high-power-density X-band operation with a much larger gate/field-plate structure. We provide the designer the option of incorporating two different devices by implementing a 0.14-µm gate length GaN MMIC process capable of high-efficiency Ka-band operation while simultaneously achieving high power density in the same process flow.The key process enabler simply uses the capacitor top plate in the MMIC process as a field plate on the passivation layer. On two separate devices on the same chip using the same MMIC process flow, we demonstrate 7.7 W/mm at 35 GHz and V DS = 30 V on a standard 4 × 65-µm T-gated FET and then 12.5 W/mm at 10 GHz and V DS = 60 V on a 4 × 75-µm T-gated FET by adding a field plate. These are the highest reported power densities achieved simultaneously at X-band and Ka-band in a single wideband GaN MMIC process.

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Pure Play GaN Foundry 0.25µm HEMT Technology for RF Applications

Cited by 9 publications

References 0 publications

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications

Implementation of High-Power-Density <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

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