J a g &%B %B* ( R e c e i v e d 19 June 1 9 8 6 ) I t i s assumed i n t h i s paper that the interquark (or gtuon) forces are dominated by color octet exchange, which leads t o the attractive forces t o form colored bound states. states i s discussed i n two quasi-confinement modeZs. diction of the espe2rimentaZ signature on the colored bound states 5s included. I t i s w i d e l y b e l i e v e d t h a t w i t h i n t h e framework o f QCD c o l o r i s conf i n e d , however, t h i s r e m a i n s t o be c o n f i r m e d .

Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consolidated behind a gate last approach, in which the transistor is built around a dummy poly polysilicon gate, which is subsequently removed and replaced with a metal gate. Current approaches to removing the dummy poly gate include plasma-based dry processes and liquid-phase wet etching.

This paper reports a comprehensive study on the influence of nitrogen incorporation on high-k (HK) device performance and reliability. Two approaches including dielectric nitrogen annealing and interfacial layer (IL) nitrogen annealing are investigated. It is found the HK nitrogen annealing is a better solution for the trade-off between mobility and inversion oxide thickness than IL annealing. The positive bias temperature instability characteristic is improved by HK annealing. However, the HK nitrogen annealing lowers the barrier of dielectric and thus results in an abnormally high leakage current.

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The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive SOI substrates with respective resistivities of ρ ~7-10Ω-cm and ρ ~7000-10000Ω-cm) using the spin-on-dopant (SOD) technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths, the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length and/or a decrease in waveguide width. The highest modulation index of ~4.15% was successfully achieved for a silicon p-i-n waveguide modulator with 5µm-wide waveguide and 7mm-long modulation electrode.