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We have fabricated flexible amorphous Indium-Gallium-Zinc-oxide (IGZO) thin-film transistors (TFTs) with back-channel-etch structure by a chemical vapor deposition-free process. All the processes are performed well below 160°C on a polyethylene napthalate (PEN) substrate with anodic aluminum oxide as gate dielectric, which can be highly immune to the strain failure. The IGZO-TFTs show field-effect mobility of 11.2 cm2/V s, subthreshold swing (SS) of 0.27 V/decade, low off-state current ∼10 fA, low leakage current <1 pA and high ION/IOFF ratio of 109. Meanwhile, the performance of flexible IGZO-TFTs do not deteriorate during the bending with the curvature radius as 10 mm. Using a PEN as substrate, flexible active-matrix organic light-emitting diode (AMOLED) displays driven by the IGZO-TFTs have been demonstrated.

Unique flowerlike Bi O (OH)(NO ) (denoted as BION) hierarchical microstructures assembled by ultrathin nanosheets were hydrothermally synthesized from incomplete hydrolysis of anhydrous bismuth nitrate (Bi(NO ) ) after adsorption of glacial acetic acid (HAc). The structure, composition, and optical properties of the products were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectroscopy, etc. The as-prepared flowerlike BION possessed an ultra-high surface area and thus exhibited exceptional photocatalytic activity for rhodamine B (RhB) degradation under UV light irradiation with an efficiency of about 17; 6 and 2.5 times higher than spherical, aggregated sheet-like BION and P25 TiO , respectively, and also superior to the reported sheet-like BION. It also showed good photocatalytic activity for crystal violet (CV) degradation. This work opens new routes for the rational design and synthesis of nontoxic basic bismuth nitrates with a facile synthetic approach, controllable morphology, and excellent photoreactivity.

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