No abstract

A flexible ferroelectric memory element based on oxide heteroepitaxy has been demonstrated with superior performance.

No abstract

There is considerable interest in the controlled p-type and n-type doping of carbon nanotubes (CNT) for use in a range of important electronics applications, including the development of hybrid CNT/silicon (Si) photovoltaic devices. Here, we demonstrate that easy to handle metallocenes and related complexes can be used to both p-type and n-type dope single-walled carbon nanotube (SWNT) thin films, using a simple spin coating process. We report n-SWNT/p-Si photovoltaic devices that are >450 times more efficient than the best solar cells of this type currently reported and show that the performance of both our n-SWNT/p-Si and p-SWNT/n-Si devices is related to the doping level of the SWNT. Furthermore, we establish that the electronic structure of the metallocene or related molecule can be correlated to the doping level of the SWNT, which may provide the foundation for controlled doping of SWNT thin films in the future.

An entirely bottom‐up approach for the preparation of liquid crystalline suspensions of core‐shell nanowires for ordered bulk heterojunction photovoltaics is demonstrated. Side‐on attachment of polythiophene derivatives to ZnO nanowires promotes a co‐axial polymer backbone‐nanowire arrangement which favors high hole mobility. This strategy offers structural control over multiple length scales and a viable means of fabricating ordered films over large areas.