Nitrogen (N)-doped ZnO thin films have been deposited on Si (100) substrates by pulsed laser deposition under different N2 pressures. The optical and magnetic properties of N-doped ZnO films have been studied with photoluminescence, Raman spectroscopy, and vibrating sample magnetometer. Photoluminescence and Raman studies reveal that N2 pressure affected the defects of N-doped ZnO films. Under 10 Pa N2 pressure, N substitutes O and forms NO acceptor. Zn interstitials are main compensating donors. Under higher N2 pressures, N not only substitutes O but also forms N2O molecules in N-doped ZnO films. Zn antisizes are compensating donors. In additional, Zn vacancies are formed and the concentration increases with increasing N2 pressure. Magnetic properties of these films show that there are two distinct ferromagnetic mechanisms: the origin of ferromagnetism in the ZnO:N-10 Pa film is Zn interstitial, while Zn vacancy leads to ferromagnetism in the ZnO:N-50 Pa film.

The Ru/C nanocomposites with loading of 20wt% were prepared by ethylene glycol in the presence of XC-72. Carbon-supported Ru nanoparticles were decorated with Pt by spontaneous deposition method after Ru surface oxides were reduced in the hydrogen atmosphere at 180 for 2h. TEM indicated that the average particle size of catalyst was about 4nm with excellent dispersion and the XRD analyzing results showed that Pt had decorated on surface of Ru. The anti-poisoning ability was studied by pre-adsorbing CO striping voltammetric curves in 0.1M HClO4. Catalytic activities of the prepared Pt/Ru/C were studied by cyclic voltammetry in a solution of 0.5 mol/L CH3OH + 0.1 mol/L HClO4. The results showed that the oxidation current density was far more than 60wt% RuPt/C (E-TEK) and 20wt% Pt/C (Johnson Matthey). At the same time, the study also showed that the prepared catalyst not only had a higher catalytic activity to methanol, but also had lower Pt loading.

Sm2Co17:Cu,Crfilms growing on Cr buffer layer and Cu seed layer were prepared by pulsed laser deposition(PLD) methodbased on Si(100) substrate. The results showed that Cu and Cr co-doped in SmCo films made the refinement of crystal grain and the increase of coercivity of SmCo. Beside, the experiments found that the incorporation of Cu and Cr in SmCo films resulted in a positive effect of the exchange bias for SmCo-CuCr system. We suggested that the mechanism of the exchange bias origins from the interaction of ferromagnetic-antiferromagnetic state (FM-AFM, SmCo-CuCr). Meanwhile, the magnetic measurment of added magnetic field and zero-field-cooled (FC-ZFC) at temperature range of 10K~300K has further confirmed the critical value of FM-AFM tansform is about 80K, which is suggested that it was attributed to the coupling competition of FM phase and AFM phase.

Micro-strip line is a kind of transmission line that is the most widely used in microwave integrated circuit. With the development of microwave integrated circuits and the increasing work frequency of the micro-strip line, a higher requirement for its electromagnetic compatibility has been raised. Finite-Difference Time-Domain (FDTD) method has characteristics of good adaptability in the analysis of electromagnetic compatibility issues and superiority in complexity of the structure modeling. For these reasons, this Article uses FDTD method which is widely used in electromagnetic field calculation to analyze the time-domain of micro-strip line, calculates its current and voltage induced in ports and discuss the response feature under different radiation conditions.