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The aim of this letter is to demonstrate the possibility of building high quality factor (Q) integrated inductors in the conventional complementary metal-oxide semiconductor (CMOS) process without any additional processes of previous papers, such as thick gold layer or multilayer interconnection. The comparative analysis is extensively carried out to investigate the detailed variation of Q performance according to inductor shape and substrate by varying the substrate resistivity with circular and rectangular shape. The high Q of nearly 12 is achieved from the fabricated inductors with 2 m metal thickness on the 2 k 1 cm silicon substrate using the CMOS process.

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