Information processing with optoelectronic devices provides an alternative way to efficiently process hybrid optical and electronic signals. Ferroelectric field‐effect transistors (FeFETs) can effectively respond to external optical and electrical stimuli by modulating their polarization states. Here, a 2D FeFET is demonstrated by the epitaxial growth of high‐quality 2D bismuth layered oxyselenide (Bi2O2Se) films on PMN‐PT(001) ferroelectric single‐crystal substrates. Upon switching the polarization direction of PMN‐PT, the authors realize in situ, reversible, and nonvolatile manipulation of the resistance of Bi2O2Se thin film (≈877%). The device simultaneously exhibits a polarization‐dependent photoresponse through visible light (λ = 405 nm) and infrared light (IR, λ = 980 nm) illumination. Combining optical stimuli with ferroelectric gating, it is demonstrated that the devices not only show nonvolatile memory and optoelectronic responses, but also show coincidence detection of visible and IR light. This work holds great potential in constructing new multiresponse and multifunction 2D‐FeFETs.

Applications using FeRh for controllable exchange coupling of two magnetic layers with in-plane and out-of-plane anisotropies require ultrathin (∼10 nm) films with pure antiferromagnetic (AF) FeRh α″ phase at room temperature (RT). However, it is also well known that the antiferromagnetic-ferromagnetic (AF-FM) transition of FeRh is sensitive to composition and deteriorates at low thicknesses. Hence, in this work, we study the composition-dependent phase ordering of co-sputtered FeRh thin films at ultrathin thicknesses of ∼10 nm. As the ultrathin films get richer in Rh, the appearance of α″ phase is typically characterized magnetically by a sudden drop in RT moment, and structurally by a slight decrease in degree of B2 chemical ordering with a sharp decrease in c-axis lattice constant. These observations are consistent with the FeRh phase diagram where FeRh abruptly enters the AF α″ phase once it becomes slightly disordered. Dependences of magnetic transition parameters on composition were also described. Moreover, higher sputtering powers possibly allow the formation of purer α″ phase with less γ-face centered cubic phase impurities. Consequently, a composition optimized 10 nm film shows a relatively low residual moment (13.5 emu/cc), thus suggesting good AF phase formation. In addition, correlation of the magnetic transition parameters with the crystal structural parameters reveal that the maximum rate of AF-FM transition (Rmax,h) and the corresponding total change in magnetization (ΔMh) interestingly shows linear dependence on the c-axis lattice constant, but would depart from this linearity under certain conditions, i.e., when grain sizes were large, crystallinity was improved and Fe content was high.

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5 d iridate thin films.

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