Information processing with optoelectronic devices provides an alternative way to efficiently process hybrid optical and electronic signals. Ferroelectric field‐effect transistors (FeFETs) can effectively respond to external optical and electrical stimuli by modulating their polarization states. Here, a 2D FeFET is demonstrated by the epitaxial growth of high‐quality 2D bismuth layered oxyselenide (Bi2O2Se) films on PMN‐PT(001) ferroelectric single‐crystal substrates. Upon switching the polarization direction of PMN‐PT, the authors realize in situ, reversible, and nonvolatile manipulation of the resistance of Bi2O2Se thin film (≈877%). The device simultaneously exhibits a polarization‐dependent photoresponse through visible light (λ = 405 nm) and infrared light (IR, λ = 980 nm) illumination. Combining optical stimuli with ferroelectric gating, it is demonstrated that the devices not only show nonvolatile memory and optoelectronic responses, but also show coincidence detection of visible and IR light. This work holds great potential in constructing new multiresponse and multifunction 2D‐FeFETs.

Integrating photonics and electronics into a single chip with a variety of capabilities is attracting particular interest for achieving high-density and highspeed multifunctional smart optoelectronic systems. However, it remains challenging to realize this goal because of the difficulty of merging various areas of science and technology. A smart responsive integrated photoelectric organic modulator is created here, which can not only possess emission wavelength switching tunability in response to light and heat but also show good optical amplification performance and field-effect transistor properties. By applying external stimuli on the resulting smart responsive system based on the judicious combination of conjugated polymers and photochromic molecules can enable efficient and reversible tuning of light emission between red and yellow via a controllable way through effective manipulation of energy transfer channels induced by optical and thermal stimuli. More importantly, stimuli-responsive emission, optical amplification, and efficient carrier transport can be simultaneously integrated in a single device with optical and electrical performance comparable to those of stand-alone devices. The results suggest an effective way to create smart integration of photonic and electronic elements in a chip with multifunctional optoelectronic characteristics for various applications such as integrated photonics, electronics, optoelectronics, and smart sensing.

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5 d iridate thin films.

A novel neurological disorder, shaking mink syndrome (SMS), emerged in Denmark and Sweden in 2000. SMS has seldom been reported in China, but the causative agent has not been detected in the country. SMS outbreaks occurred in multiple provinces in 2020. A total of 44 brain samples from minks associated with SMS were collected from Heilongjiang, Liaoning and Shandong provinces of which 28 samples (63.3%) were SMS-astrovirus (SMS-AstV)-positive by reverse transcription PCR. Histopathological examination revealed non-suppurative encephalitis in three minks. Moreover, the complete coding region sequences (CDSs, 6559 bp) of a sample collected from a 2-month-old mink (termed SMS-AstV-H1, GSA accession No. SAMC816786) were amplified by PCR and Sanger sequencing. The complete CDS and open reading frame 2 sequences of SMS-AstV-H1 were 94.3% and 96.4% identical to an SMS-AstV strain (GenBank accession number: GU985458). Phylogenetically, SMS-AstV-H1 was closely related to an SMS-AstV strain (GU985458). Based on the above results, we describe SMS-AstV-associated encephalitis in farmed minks in China. Future studies need to focus on epidemiology, virus isolation and potential interspecies transmission of SMS-AstV.