A novel driving scheme, named Dynamic Capacitance Compensation (DCC), for active-matrix (AM) LCDs was developed. It takes the charge-&-hold nature of AM-LCDs into consideration to enhance the switching speed. By incorporating DCC and faster liquid crystal, a TFT-LCD whose response time was less than 10 ms for all gray levels with the on + off time of 8.4 ms was developed. DCC can be applied to any kind of LCD modes to reduce the gray response time to less than 1 frame.
To synthesize nanocrystalline Ni 3 S 2 cathode material for Na/Ni 3 S 2 cell with low cost nickel and sulfur elements, mechanical alloying (MA) was employed directly and with different ball powder ratios (BPRs) of 20 ׃ 1, 25 ׃ 1 and 30 ׃ 1, the mean particle size of 3.99, 2.84 and 2.75 μm can be obtained, respectively. In order to ulteriorly reduce the particle size to improve the contact areas between the active materials, the wet ball milling with the normal Hexane (C 6 H 14 ) as the milling solvent was also conducted for 30 h using the ball milling machine, and the submicro Ni 3 S 2 powder particles can be gained. The charge/discharge properties of Na/Ni 3 S 2 cells for wet milled system were investigated at room temperature using 1 M NaCF 3 SO 3 (sodium trifluoromethanesulfonate) dissolved in TEGDME (tetra ethylene glycol dimethyl ether) as the liquid electrolyte. And the initial charge/discharge capacity was 397 and 425 mAh/g, respectively, which indicates the small particle size of cathode materials are conductive to the discharge properties.
A high speed serial interface receiver is realized in a 0.18um high voltage CMOS technology for a mobile 24‐bit hVGA TFT‐LCD driver (LDI) IC. The type of serial interface implemented is called Simple Display Port (SiDP) and is intended to replace the legacy RGB interface in the LDI IC's. The receiver consists of one clock and two data channels, and thereby reduces the number of signal lines going through the hinge of a mobile phone from 28 down to 6. All channels conform to Sub Low‐Voltage Differential Signaling (SubLVDS) convention. The total transfer rate can be up to 800Mbps for two data channel. The current consumption was 5.4mA at the data rate of 600Mbps.
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