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ZnO-based transistors were solution-processed using ∼3.6 nm sized ZnO quantum dots (QDs). Spin-deposited ZnO QD layer was annealed to remove QD capping organic molecules and to increase the connectivity of adjacent QDs. The resulting QD layer was highly transparent and crack free without any noticeable pores. 600 °C annealing of QD channel layer resulted in the highest electrical performances of bottom-gate QD-based transistors. A small quantity of Sn doping into the QD channel layer was found to be effective in further improving the electrical characteristics of the QD-based transistor, in particular exhibiting a higher field-effect mobility (0.282 cm2 V−1 s−1) by more than 4 factors than that of an undoped QD-based one. Finally, a fully transparent Sn-doped QD-based device was demonstrated by sputter deposition of Ga-doped ZnO as source–drain transparent electrodes and its electrical properties were evaluated.

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ZnO film was grown on ZnO quantum dot seed layer-coated substrate by a low-temperature chemical bath deposition, where sodium citrate serves as a complexing agent for Zn2+ ion. The ZnO film deposited under the optimal condition exhibited a highly uniform surface morphology with a thickness of approimately 30 nm. For the fabrication of thin-film-transistor with a bottom-gate structure, ZnO film was chemically deposited on the transparent substrate of a seed layer-coated SiN(x)/ITO (indium tin oxide)/glass. As-deposited ZnO channel was baked at low temperatures of 60-200 degrees C to investigate the effect of baking temperature on electrical performances. Compared to the device with 60 degrees C-baked ZnO channel, the TFT performances of one with 200 degrees C-baked channel were substantially improved, exhibiting an on-off current ratio of 3.6 x 10(6) and a saturated field-effect mobility of 0.27 cm2/V x s.