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We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus δ-layers and P δ-layer tunnel junctions in silicon. In order to evaluate size quantization effects on the conductivity, we consider two principal cases: nanoscale finite-width structures, used in transistors, and infinitely-wide structures, electrical properties of which are typically known experimentally. For devices widths W < 10nm, quantization effects are strong and it is shown that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For W > 10nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device values. For tunnel junctions, the quantization of the conduction band leads to deviations from the exponential dependence of the current on the tunnel gap length for low applied biases (≤10mV).

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