We analyze electric transport and noise properties at 4.2 K of self-shunted superconductor-normal metal-superconductor (SNS) sandwich-type Josephson junctions, comprising Nb as the superconductor and Hf-Ti as the normal conducting material, with lateral dimensions down to approximately 80 nm. The junctions are fabricated with an optimized multilayer Nb technology based on nanopatterning by electron-beam lithography and chemical-mechanical polishing. The dependence of transport properties on the junction geometry (lateral size and barrier thickness d Hf-Ti) is studied, yielding a characteristic voltage V c up to approximately 100 μV for the smallest d Hf-Ti = 17 nm. The observed small hysteresis in the current-voltage curves of devices with high V c and large size can be attributed to self-heating of the junctions and fitted with an extended version of the resistively shunted junction model. Measurements of voltage noise of single junctions are consistent with the model including self-heating effects. The potential of our technology for further miniaturization of nanoscale superconducting quantum interference devices and for the improvement of their performance is discussed.

We achieve ultra-low excess noise in nanoSQUIDs from the high-transition temperature cuprate superconductor YBa2Cu3O7 on a low-microwave-loss substrate.

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We present a fabrication technology for nanoscale superconducting quantum interference devices (SQUIDs) with overdamped superconductor-normal metal-superconductor (SNS) trilayer Nb/HfTi/Nb Josephson junctions. A combination of electron-beam lithography with chemical-mechanical polishing and magnetron sputtering on thermally oxidized Si wafers is used to produce direct current SQUIDs with 100-nm-lateral dimensions for Nb lines and junctions. We extended the process from originally two to three independent Nb layers. This extension offers the possibility to realize superconducting vias to all Nb layers without the HfTi barrier, and hence to increase the density and complexity of circuit structures. We present results on the yield of this process and measurements of SQUID characteristics.