Scientific and technological progress depend substantially on the
ability to image on the nanoscale. In order to investigate complex,
functional, nanoscopic structures like, e.g., semiconductor devices,
multilayer optics, or stacks of 2D materials, the imaging techniques
not only have to provide images but should also provide quantitative
information. We report the material-specific characterization of
nanoscopic buried structures with extreme ultraviolet coherence
tomography. The method is demonstrated at a laser-driven broadband
extreme ultraviolet radiation source, based on high-harmonic
generation. We show that, besides nanoscopic axial resolution, the
spectral reflectivity of all layers in a sample can be obtained using
algorithmic phase reconstruction. This provides localized,
spectroscopic, material-specific information of the sample. The method
can be applied in, e.g., semiconductor production, lithographic mask
inspection, or quality control of multilayer fabrication. Moreover, it
paves the way for the investigation of ultrafast nanoscopic effects at
functional buried interfaces.
Time-and angle-resolved photoemission spectroscopy of solids in the extreme ultraviolet at 500 kHz repetition rate Review of Scientific Instruments 90, 023104 (2019);
We present a laboratory beamline dedicated to nanoscale subsurface imaging using extreme ultraviolet coherence tomography (XCT). In this setup, broad-bandwidth extreme ultraviolet (XUV) radiation is generated by a laser-driven high-harmonic source. The beamline is able to handle a spectral range of 30–130 eV and a beam divergence of 10 mrad (full width at half maximum). The XUV radiation is focused on the sample under investigation, and the broadband reflectivity is measured using an XUV spectrometer. For the given spectral window, the XCT beamline is particularly suited to investigate silicon-based nanostructured samples. Cross-sectional imaging of layered nanometer-scale samples can be routinely performed using the laboratory-scale XCT beamline. A depth resolution of 16 nm has been achieved using the spectral range of 36–98 eV which represents a 33% increase in resolution due to the broader spectral range compared to previous work.
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