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A novel NiPt-silicide formation using microwave annealing (MWA) is proposed, and superior properties of NiPt silicide in ultra-shallow junction (USJ) are demonstrated for the first time. MWA is suitable for the thin NiPtSi formation with its stable and ultra-low temperature (less than 250 °C) heating. The anomalous Ni diffusion during the NiPtSi formation is considered to be suppressed because MW system heats Si substrates selectively. As a result, low-resistive and homogeneous NiPtSi can be formed, and the increase of the junction leakage current due to the abnormal NiPt-silicide growth is successfully suppressed in USJ. This superior technique is quite promising for achieving 22nm-node CMOS and beyond.

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New orientations for longitudinal leaky SAW with small propagation losses and high velocities in lithium niobate (LN) and lithium tantalate (LT) have been found. Their velocities are 6100 to 6500 m/s in LN and 5200 to 5800 m/s in LT. Their propagation losses are almost negligible only in the case of an Al-grating structure. For example, the Al thickness relative to the SAW wavelength must be 8.4% for 171 degrees YZ'-LN; for 133 degrees YZ'-LT, the value must be 9.2%. These propagation properties were obtained by using a simulator that combined both finite-element and analytical methods. These results were also well confirmed by measuring the impedance responses of one-port SAW resonators.