We describe an advanced 0.13pm CMOS technology platform optimized for density, performance, low power and analoghixed signal applications. Up to 8 levels of Copper interconnect with industries first true low-k dielectric (SiLK, k=2.7) [ l ] result in superior interconnect performance at aggressive pitches. A 2.28pm2 SRAM cell is manufactured with high yield by introducing elongated local interconnects on the contact level without increasing process complexity. Trench based embedded DRAM is offered for large area memory. Modular analog devices as well as passive components like resistors, MIM capacitors and intrinsic inductors are integrated. References(1) R. D. Goldblatt et al.: A High Performance 0.13 pm Copper BEOL Technology with Low-k Dielectric, IlTC 2000 (2) L.K. Han et al: A Modular 0.13pm BULK CMOS Technology for High performance and Low Power Applications, VLSI 2000, p. 12 (3) M. Armacost et al: A High Reliability Metal Insulator Metal Capacitor for 0,18 pm Copper Technology, IEDM 2000, p. 157 SiLK is a registixed trademark of The Dow Chemical Company 101 4-891 14-012-7/01 2001 Symposium on VLSI Technology Digest of Technical Papers

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