Silver halide-chalcogenide glass composite thin film structures are evaluated as inorganic x-ray resists at A1 Ks line. The sensitivity is shown to be a factor of 2 better than the PMMA 2041 for a 300 nm thick resist layer. A comparable contrast is indicated. A high resolution capability is expected because of the amorphous nature Of the composite. A possible mechanism of this inorganic resist action is discussed. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.174.255.116 Downloaded on 2015-06-03 to IP

Evaporated As2S3 thin films are employed as inorganic resists in microlithography. Its sensitivity is enhanced by overcoating with a AgCl layer to form a composite. The approach combines the silver halide technology well known to the photographic industry with the newly developed chalcogenide resist technology to yield higher sensitivity and resolution. A CF4 plasma process is developed for pattern generation in these inorganic resists. Since the resist contains arsenic, a dopant for silicon device fabrication, a diffusion process is developed and silicon p–n diodes are fabricated and characterized. A complete dry process of silicon device fabrication is discussed. Possible mechanisms of the photostructural change in As2S3 and the silver photodissolution into As2S3 are mentioned.