Multibit memory devices based on the ferroelectric copolymer P(VDF‐TrFE) (poly‐(vinylidenefluoride‐trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin‐coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin‐film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively.

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Abstract-A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance limitations are outlined for each given technology focusing on the quality factor (Q) and tuning ratio (η) as figures of merit. The state of the art in terms of these figures of merit of several tunable and switchable technologies is visualized and discussed. If the performance of these criteria is not met, the application will not be feasible. The quality factor can typically be traded off for tuning ratio. The benchmark of tunable capacitor technologies shows that transistor-switched capacitors, varactor diodes, and ferroelectric varactors perform well at 2 GHz for tuning ratios below 3, with an advantage for GaAs varactor diodes. Planar microelectromechanical capacitive switches have the potential to outperform all other technologies at tuning ratios higher than 8. Capacitors based on tunable dielectrics have the highest miniaturization potential, whereas semiconductor devices benefit from the existing manufacturing infrastructure.

Abstract-A regression-based technique is presented which distinguishes the dielectric loss from the resistive loss of high density planar capacitors in a very wide bandwidth of 0.1-8 GHz. Moreover, the procedure yields useful results if the capacitor deviates from a lumped element model and indicates when the used approximations break down or whether size-dependent loss mechanisms exist.

An I-line photolithography process for ferroelectric polymers is developed. It is based on photocrosslinking using a bisazide photoinitiator. Patterned layers were realized down to 1–2 μm resolution. Crosslinking yields a close-to-insoluble ferroelectric polymer network that counter intuitively has similar ferroelectric properties as a noncrosslinked film. The negative process is used to stack ferroelectric films on top of each other to make three-dimensional cross-bar arrays of nonvolatile ferroelectric capacitor memories.