On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

Tiggelman, M.P.J.; Reimann, K.; Rijs, F. van; Schmitz, Jurriaan; Hueting, R.J.E.

doi:10.1109/ted.2009.2026391

Cited by 40 publications

(22 citation statements)

References 44 publications

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“…The most widely used type of tunable capacitors are the varactor diodes 45 in which the depletion region acts as the gap between the conducting electrodes. In the case of Schottky diodes, the depletion layer is created at the semiconductor side of a metal-semiconductor junction 46 while in a p-n junction diode the depletion layer is distributed over the junction as a function of the doping profile.…”

Section: A Continuous Tunable Capacitorsmentioning

confidence: 99%

“…Semiconductor devices with high performance at radio frequencies such as PiN diodes, CMOS switches, and pHEMT switches are typically used with low loss nontunable capacitors to fulfill high performance demands of those applications where continuous capacitance change is not required. 45 MEMS switched capacitors suitable for rf applications have also been developed. 37 …”

Section: A Continuous Tunable Capacitorsmentioning

confidence: 99%

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Vertically aligned carbon based varactors

Ghavanini

Enoksson

Bengtsson

et al. 2011

Journal of Applied Physics

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This paper gives an assessment of vertically aligned carbon based varactors and validates their potential for future applications. The varactors discussed here are nanoelectromechanical devices which are based on either vertically aligned carbon nanofibers or vertically aligned carbon nanotube arrays. A generic analytical model for parallel plate nanoelectromechanical varactors based on previous works is developed and is used to formulate a universal expression for their voltage-capacitance relation. Specific expressions for the nanofiber based and the nanotube based varactors are then derived separately from the generic model. This paper also provides a detailed review on the fabrication of carbon based varactors and pays special attention to the challenges in realizing such devices. Finally, the performance of the carbon based varactor is assessed in accordance with four criteria: the static capacitance, the tuning ratio, the quality factor, and the operating voltage. Although the reported performance is still far inferior to other varactor technologies, our prognosis which stems from the analytical model shows a promise of a high quality factor as well as a potential for high power handling for carbon based varactors.

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Section: A Continuous Tunable Capacitorsmentioning

confidence: 99%

Section: A Continuous Tunable Capacitorsmentioning

confidence: 99%

Vertically aligned carbon based varactors

Ghavanini

Enoksson

Bengtsson

et al. 2011

Journal of Applied Physics

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“…A large tuning range requires a large change in depletion-width and thus a large series-resistance (low Q due to lowly doped semiconductor) for the minimum depletion state. This trade-off becomes [11,15] 1 Q = ωC vc,max R semi = ωε 0 ε r h vc,min hvc,max hvc,min ρ(x)dx (2. 7) with ω the angular frequency, C vc,max the maximum capacitance of the varicap at h vc,min , R semi the resistance of the semiconductor, and the resistivity of the epi-layer ρ(x) = 1 N (x)qµ n (2.…”

Section: Varicapsmentioning

confidence: 99%

“…Therefore, for RF applications thin film ferroelectric capacitors in the paraelectric phase are often desired, in addition to the low temperature dependence. However, the capacitor should be optimized according to certain specifications depending on the application, since a trade-off exists between losses and tuning ratio (see [11,109] or paragraph 2.2.2).…”

Section: Barium Strontium Titanate As a Ferroelectricmentioning

confidence: 99%

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Thin fim barium strontium titanate capacitors for tunable RF frond-end applications

Tiggelman¹

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Antenna Booster Technology

Anguera,

Andújar

2024

Encyclopedia of RF and Microwave Engineering

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Small and multiband antennas are always playing a predominant role in wireless communications to provide range, connectivity, and ensure battery life. In this regard, antenna booster technology features small size (∼ λ /30), multiband, and multi‐radio behavior and at the same time easy to be embedded into a wireless device due to its chip‐like nature. The design of antenna systems radically differs from those based on conventional antenna design relying on shaping the geometry of the antenna to determine the frequencies of operation. On the contrary, with the antenna booster technology approach, the frequencies of operation are determined by the designer thanks to the combination of an antenna booster and a matching network. By doing so, all the complexity in the antenna part is removed and most of the intelligence is translated into the matching network. This enables making an antenna booster 10 times smaller than other antennas while flexibly adapting to any wireless protocol and device. Besides, reconfigurability can be combined with the matching network increasing the flexibility to adapt to any frequency band. Antenna booster technology is finding its applications in the design of wireless devices needing operation in the frequency range from 0.4 to 10 GHz.

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On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

Cited by 40 publications

References 44 publications

Vertically aligned carbon based varactors

Vertically aligned carbon based varactors

Thin fim barium strontium titanate capacitors for tunable RF frond-end applications

Antenna Booster Technology

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