The continuous down scaling of the dimensions for the logic devices has imposed to carefully track the pattern collapse issue when cleaning after FIN etch. Showing the limitations of the hot IPA drying technique toward scaled FIN dimensions, a cleaning using a surface modification drying technique has been proposed and successfully implemented. It is also discussed the use of some post treatment solutions to remove the grafted layer used to modify the FIN surface while preserving the integrity of the FIN structures.

A selective wet etching process for fabricating SiGe and Ge nanowires for gate all around transistors is introduced in this paper. Two formulated proprietary chemical mixtures with highly selective etching properties (Si vs. SiGe and SiGe vs. Ge) can effectively dissolve the sacrificial layers with minimal damage to the interstitial nanowire materials. The Auger Electron Spectroscopy (AES) surface characterization indicates that no chemical contamination is left after the wet etching process.

Gate All-Around (GAA) is considered a key design feature for future CMOS technology. SiGe vs. Si selective etch is required for Si nanowire formation in GAA. It is confirmed the selective SiGe removal with commodity chemical (mixtures of hydrofluoric acid (HF), hydrogen peroxide (H2O2) and acetic acid (CH3COOH, HAc)), however the thick oxidized layer on Si NW was observed after commodity chemical process, which is indicated the significant Si NW loss. On the other hand, the formulated mixture ACT® SG-101, which is focusing on SiGe oxidizer, chemical pH, solvent polarity & corrosion inhibitor for chemical concept, was performed higher selectivity and lower Si loss than commodity chemical. The formulated mixture has also been used to form an inner spacer for cavity etch scheme and confirmed uniform cavity etch and inner spacer filling on topological test structure.

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Polymer mixtures composed of double networks of a polystyrene derivative (PSAF) and poly(methyl methacrylate) (PMMA) were alternatively synthesized by using ultraviolet (UV) and visible (Vis) light. The PSAF networks were generated by UV irradiation to photodimerize the anthracene (A) moieties labeled on the PSAF chains, whereas PMMA networks were produced by photopolymerization of methyl methacrylate (MMA) monomer and the cross-link reaction using ethylene glycol dimethacrylate (EGDMA) under Vis light irradiation. It was found that phase separation process of these networks can be independently induced and promptly controlled by using UV and Vis light. The characteristic length scale distribution of the resulting co-continuous morphology can be well regulated by the UV and Vis light intensity. In order to confirm and utilize the connectivity of the bicontinuous morphology observed by confocal microscopy, a very small amount, 0.1 wt%, of multi-walled carbon nanotubes (MWCNTs) was introduced into the mixture and the current–voltage (I–V) relationship was subsequently examined. Preliminary data show that MWCNTs are preferentially dispersed in the PSAF-rich continuous domains and the whole mixture became electrically conducting, confirming the connectivity of the observed bi-continuous morphology. The experimental data obtained in this study reveal a promising method to design various scaffolds for conducting soft matter taking advantages of photopolymerization-induced phase separation.