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The temperature dependence on the diffusion coefficients of Al, Ga and In in ZnSe was studied. The cleavage cross-sectional surface of a diffused ZnSe wafer was observed by the cathodoluminescence mode of SEM. The following relations were obtained: D Al=1.18×10-1 exp (-1.92 eV/k T), D Ga=6.76×10-2 exp (-1.80 eV/k T) and D In=4.45×10-1 exp (-1.84 eV/k T).

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