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Selective deposition of polycrystalline and single-crystal diamonds has been achieved on a silicon wafer by chemical vapor deposition from CH4 and H2 gases using a hot-filament method. The nucleation of diamonds occurs selectively at the sites fabricated by successive roughening and patterned etching of wafers.

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3-SIC epitaxial films were grown on Si (111) substrate by a two-step chemical vapor deposition (CVD) method to form a buffer layer (carbonization process) and to grow ~-SiC film using CH3C1-H2 and CH3CI-SiH4-H2 gas systems. ~-SiC epitaxial films with a smooth surface were obtained, and the crystallinity and morphology were comparable to those of B-SiC films grown on Si (100) using a hydrocarbon-SiH4-H2 gas system. The buffer layers of mosaic [3-SIC crystals of 90 nm thickness were formed on Si (111) substrate with the generation of voids in the carbonization process. This result directly indi-