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Low-driving-current and high-eye-margin 10-Gb/s operation was demonstrated by a GaInAsP/InP distributed reflector (DR) laser with wirelike active regions. The reduction of modulation bias currents was realized by the high modulation efficiency of five-stack quantum wirelike active regions as well as thin optical confinement layers for a shorter carrier transit time. A mask test of 10 GbE with 20% margin was passed with a low bias current of 10 mA, and the maximum 3-dB bandwidth was over 15 GHz.

Electrode GaInAs absorption layer W s = 0.85 μm p-InP n-InP S.I.-InP substrate L = 380 μm Abstract-10 Gb/s operation of GaInAs/InP lateral junction-type photodiode was obtained by adopting a narrow stripe width of 0.85 μm. The responsivity of 0.39 A/W and the 3dB bandwidth of 8.8 GHz at a bias voltage of -2 V were obtained with the device length of 380 μm.