Photonic devices based on perovskite materials are considered promising alternatives for a wide range of these devices in the future because of their broad bandgaps and ability to contribute to light amplification. The current study investigates the possibility of improving the light amplification characteristics of CsPbBr3 perovskite quantum dot (PQD) films using the surface encapsulation technique. To further amplify emission within a perovskite layer, CsPbBr3 PQD films were sandwiched between two transparent layers of poly(methyl methacrylate) (PMMA) to create a highly flexible PMMA/PQD/PMMA waveguide film configuration. The prepared perovskite film, primed with a polymer layer coating, shows a marked improvement in both emission efficiency and amplified spontaneous emission (ASE)/laser threshold compared with bare perovskite films on glass substrates. Additionally, significantly improved photoluminescence (PL) and long decay lifetime were observed. Consequently, under pulse pumping in a picosecond duration, ASE with a reduction in ASE threshold of ~1.2 and 1.4 times the optical pumping threshold was observed for PQDs of films whose upper face was encapsulated and embedded within a cavity comprising two PMMA reflectors, respectively. Moreover, the exposure stability under laser pumping was greatly improved after adding the polymer coating to the top face of the perovskite film. Finally, this process improved the emission and PL in addition to enhancements in exposure stability. These results were ascribed in part to the passivation of defects in the perovskite top surface, accounting for the higher PL intensity, the slower PL relaxation, and for about 14 % of the ASE threshold decrease.

As a wavelength-tunable lasing material, perovskites are now generating a lot of scientific attention. Conventional solution-processed CsPbX 3 perovskite films sometimes suffer unavoidable pinhole defects and poor surface morphology, severely limiting their performance on amplified spontaneous emission (ASE) and lasing application. Herein, a thermal evaporation approach is explored in our work to achieve a uniform and highcoverage CsPb(Br 1−x Y x ) 3 (Y = I, Cl) perovskites polycrystalline thin film. The ASE of these films was studied using a picosecond laser system. The ASE profile increases rapidly over the narrow peak in relation to the laser pump intensity, confirming the development of stimulated emission. ASE began when the energy density threshold was reached and ranged between 25 and 170 μJ/ cm 2 per pulse for perovskite materials when replacing I with Br and then Cl. This work emphasizes the notable optical properties of high-quality perovskite thin films, leading to possible accessible uses in optoelectronic applications.

The growth of nanocrystals (NCs) from metal oxide-based substrates with exposed high-energy facets is of particular importance for many important applications, such as solar cells as photoanodes due to the high reactivity of these facets. The hydrothermal method remains a current trend for the synthesis of metal oxide nanostructures in general and titanium dioxide (TiO2) in particular since the calcination of the resulting powder after the completion of the hydrothermal method no longer requires a high temperature. This work aims to use a rapid hydrothermal method to synthesize numerous TiO2-NCs, namely, TiO2 nanosheets (TiO2-NSs), TiO2 nanorods (TiO2-NRs), and nanoparticles (TiO2-NPs). In these ideas, a simple non-aqueous one-pot solvothermal method was employed to prepare TiO2-NSs using tetrabutyl titanate Ti(OBu)4 as a precursor and hydrofluoric acid (HF) as a morphology control agent. Ti(OBu)4 alone was subjected to alcoholysis in ethanol, yielding only pure nanoparticles (TiO2-NPs). Subsequently, in this work, the hazardous chemical HF was replaced by sodium fluoride (NaF) as a means of controlling morphology to produce TiO2-NRs. The latter method was required for the growth of high purity brookite TiO2 NRs structure, the most difficult TiO2 polymorph to synthesize. The fabricated components are then morphologically evaluated using equipment, such as transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), electron diffraction (SAED), and X-ray diffraction (XRD). In the results, the TEM image of the developed NCs shows the presence of TiO2-NSs with an average side length of about 20–30 nm and a thickness of 5–7 nm. In addition, the image TEM shows TiO2-NRs with diameters between 10 and 20 nm and lengths between 80 and 100 nm, together with crystals of smaller size. The phase of the crystals is good, confirmed by XRD. The anatase structure, typical of TiO2-NS and TiO2-NPs, and the high-purity brookite-TiO2-NRs structure, were evident in the produced nanocrystals, according to XRD. SAED patterns confirm that the synthesis of high quality single crystalline TiO2-NSs and TiO2-NRs with the exposed {001} facets are the exposed facets, which have the upper and lower dominant facets, high reactivity, high surface energy, and high surface area. TiO2-NSs and TiO2-NRs could be grown, corresponding to about 80% and 85% of the {001} outer surface area in the nanocrystal, respectively.

Perovskite halide has many advantages that attracted the attention of researchers in the last years, but many challenges prevent the use of halide perovskites in different applications. One of these challenges is the low thermal stability resulting in phase transitions with temperatures. Here, the photoluminescence (PL) characteristics and related phase transitions of different CH3NH3Pb(BrxI1−x)3 (MA(BrxI1−x)3)3 perovskites structures have been investigated under a wide temperature range. The work that has been conducted demonstrates that under temperature, the exciton behavior of the halide anions, I and Br, has a considerable impact on structural phases and the fluorescence process. The obtained results for the temperature dependence of PL for MAPb(BrxI1−x)3 showed a wide range of emission wavelengths, between 500–800 nm with a decrease in PL intensity with increasing temperature. In addition, the ratio of both bromine and iodine in MAPb(BrxI1−x)3 affects the range of phase transition temperatures, where at x = 0.00, 0.25, and 0.50 the first transition occurs below room temperature (orthorhombic to tetragonal) phase and the other occurs above room temperature (tetragonal to cubic) phase. Furthermore, increasing the proportion of bromine causes all the transitions to occur below room temperature. The presented findings suggest a suitable halide component under a temperature-controlled phase transformation to benefit these materials in photonics devices.

The high crystal quality of formamidium lead bromide perovskite (CH(NH2)2PbBr3 = FAPbBr3) was infiltrated in a mesoporous TiO2 network. Then, high-quality FAPbBr3 films were evaluated as active lasing media, and were irradiated with a picosecond pulsed laser to demonstrate amplified spontaneous emission (ASE), which is a better benchmark of its intrinsic suitability for gain applications. The behavior was investigated using two excitation wavelengths of 440 nm and 500 nm. Due to the wavelength-dependent absorbance spectrum and the presence of a surface adsorption layer that could be reduced using the shorter 440 nm wavelength, the ASE power dependence was strongly reliant on the excitation wavelength. The ASE state was achieved with a threshold energy density of ~200 µJ/cm2 under 440 nm excitation. Excitation at 500 nm, on the other hand, needed a higher threshold energy density of ~255 µJ/cm2. The ASE threshold carrier density, on the other hand, was expected to be ~4.5 × 1018 cm−3 for both excitations. A redshift of the ASE peak was detected as bandgap renormalization (BGR), and a BGR constant of ~5–7 × 10−9 eV cm was obtained.