Memory retention characteristics of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field effect transistors (FETs) were investigated in detail using a simple structure, referred to as quasi-MFMIS, in which one electrode of the metal–ferroelectric–metal (MFM) capacitor is connected to a gate electrode of a conventional metal–oxide–semiconductors (MOS) FET using an external interconnection cable. It was found that the memory window of the MFMIS FET was quickly lost (after about 1000 s) and from a comparison with simulations, this was attributed mainly to a decrease in ferroelectric polarization due to a depolarization field inevitably remaining in the ferroelectric film during memory retention.

Capacitance-voltage characteristics have been obtained for Schottky barrier diodes, formed on polished surfaces of natural p-type semiconducting diamond, before and after illumination with radiation capable of neutralizing ionized donors in the depletion layer. Plots of 1/Cz versus Vfor the two cases have yielded values for both the acceptor concentration N A and the donor concentration N D . Comparison of these data with those obtained from Hall effect measurements indicate that the latter overestimate the value of NA-N D by almost a factor of 2. The boron concentration has been determined in approximately the same surface layer as the capacitance measurements by detecting the cr-particles emitted during irradiation with 700 keV protons using the reaction 1lB (p, cr#Be*+ 2az. A quantitative correlation has been obtained between the boron and acceptor concentrations. 73 951

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