A highly stretchable metal electrode is developed via the solution-processing of very long (>100 μm) metallic nanowires and subsequent percolation network formation via low-temperature nanowelding. The stretchable metal electrode from very long metal nanowires demonstrated high electrical conductivity (~9 ohm sq(-1) ) and mechanical compliance (strain > 460%) at the same time. This method is expected to overcome the performance limitation of the current stretchable electronics such as graphene, carbon nanotubes, and buckled nanoribbons.

In this paper, in order to increase the power conversion efficiency we demonstrated the selective growth of "nanoforest" composed of high density, long branched "treelike" multigeneration hierarchical ZnO nanowire photoanodes. The overall light-conversion efficiency of the branched ZnO nanowire DSSCs was almost 5 times higher than the efficiency of DSSCs constructed by upstanding ZnO nanowires. The efficiency increase is due to greatly enhanced surface area for higher dye loading and light harvesting, and also due to reduced charge recombination by providing direct conduction pathways along the crystalline ZnO "nanotree" multi generation branches. We performed a parametric study to determine optimum hierarchical ZnO nanowire photoanodes through the combination of both length-wise growth and branched growth processes. The novel selective hierarchical growth approach represents a low cost, all solution processed hydrothermal method that yields complex hierarchical ZnO nanowire photoanodes by utilizing a simple engineering of seed particles and capping polymer.

Crack formation drives material failure and is often regarded as a process to be avoided. However, closer examination of cracking phenomena has revealed exquisitely intricate patterns such as spirals, oscillating and branched fracture paths and fractal geometries. Here we demonstrate the controlled initiation, propagation and termination of a variety of channelled crack patterns in a film/substrate system comprising a silicon nitride thin film deposited on a silicon substrate using low-pressure chemical vapour deposition. Micro-notches etched into the silicon substrate concentrated stress for crack initiation, which occurred spontaneously during deposition of the silicon nitride layer. We reproducibly created three distinct crack morphologies--straight, oscillatory and orderly bifurcated (stitchlike)--through careful selection of processing conditions and parameters. We induced direction changes by changing the system parameters, and we terminated propagation at pre-formed multi-step crack stops. We believe that our patterning technique presents new opportunities in nanofabrication and offers a starting point for atomic-scale pattern formation, which would be difficult even with current state-of-the-art nanofabrication methodologies.

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Inkjet printing of functional materials is a key technology toward ultra-low-cost, large-area electronics. We demonstrate low-temperature 3D micro metal structure fabrication by direct inkjet printing of metal nanoparticles (NPs) as a versatile, direct 3D metal structuring approach representing an alternative to conventional vacuum deposition and photolithographic methods. Metal NP ink was inkjet-printed to exploit the large melting temperature drop of the nanomaterial and the ease of the NP ink formulation. Parametric studies on the basic conditions for stable 3D inkjet printing of NP ink were carried out. Furthermore, diverse 3D metal microstructures, including micro metal pillar arrays, helices, zigzag and micro bridges were demonstrated and electrical characterization was performed. Since the process requires low temperature, it carries substantial potential for fabrication of electronics on a plastic substrate.