High-quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors were fabricated to investigate the electrical transport properties. Devices on as-grown material were p-channel with channel mobilities 1–10cm2V−1s−1. Postgrowth vapor doping with bismuth converted these to n-channel behavior.

High performance ambipolar silicon nanowire (SiNW) transistors were fabricated. SiNWs with uniform oxide sheath thicknesses of 6–7nm were synthesized via a gas-flow-controlled thermal evaporation method. Field effect transistors (FETs) were fabricated using as-grown SiNWs. A two step annealing process was used to control contacts between SiNW and metal source and drain in order to enhance device performance. Initially p-channel devices exhibited ambipolar behavior after contact annealing at 400°C. Significant increases in on/off ratio and channel mobility were also achieved by annealing.

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We review our current progress on semiconductor nanowires of β-Ga 2 O 3 , Si and GaN. These nanowires were grown using both vapor-solid (VS) and vapor-liquid-solid (VLS) mechanisms. Using transmission electron microscopy (TEM) we studied their morphological, compositional and structural characteristics. Here we survey the general morphologies, growth directions and a variety of defect structures found in our samples. We also outline a method to determine the nanowire growth direction using TEM, and present an overview of device fabrication and assembly methods developed using these nanowires. Comments Postprint version. Published in Applied Physics AbstractWe review our current progress on semiconductor nanowires of β-Ga 2 O 3 , Si and GaN. These nanowires were grown using both vapor-solid (VS) and vapor-liquid-solid (VLS) mechanisms. Using transmission electron microscopy (TEM) we studied their morphological, compositional and structural characteristics. Here we survey the general morphologies, growth directions and a variety of defect structures found in our samples.We also outline a method to determine the nanowire growth direction using TEM, and present an overview of device fabrication and assembly methods developed using these nanowires.3

The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found pchannel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n-and p-channel FET devices. Comments ABSTRACTThe electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From asgrown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n-and pchannel FET devices.