Applications of electron microscopy to the characterization of semiconductor nanowires

Tham, Douglas; Nam, Chang‐Yong; Byon, Kumhyo; Kim, Jinyong; Fischer, J. E.

doi:10.1007/s00339-006-3705-y

Cited by 7 publications

(4 citation statements)

References 46 publications

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“…To avoid a common experimental error in the determination of the nanowire growth direction, 27 the growth direction was also determined by examining cross sections of the nanowires, where the growth direction is the same as the zone axis of the diffraction pattern. To avoid a common experimental error in the determination of the nanowire growth direction, 27 the growth direction was also determined by examining cross sections of the nanowires, where the growth direction is the same as the zone axis of the diffraction pattern.…”

Section: Resultsmentioning

confidence: 99%

Oxidation of silicon nanowires for top-gated field effect transistors

Liu¹,

Wang²,

Ho³

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inPalladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection Appl. Phys. Lett.Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration J. Appl. Phys. 112, 034513 (2012); 10.1063/1.4745858 Electronic transport characteristics of electrolyte-gated conducting polyaniline nanowire field-effect transistors Appl. Phys. Lett. 95, 013113 (2009); 10.1063/1.3176444Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors Appl.The oxidation of unintentionally doped p-type silicon nanowires grown by the vapor-liquid-solid ͑VLS͒ method and their integration into top-gated field effect transistors is reported. Dry thermal oxidation of as-grown silicon nanowires with diameters ranging from 20 to 400 nm was carried out at 700 and 900°C with or without the addition of a chlorinated gas source. The oxidation rate was strongly dependent on the as-grown nanowire diameter, with the large-diameter nanowires oxidizing up to five times faster than the smallest nanowires at 900°C. At each diameter, the addition of trichloroethane ͑TCA͒ enhanced the rate compared to oxidation in pure O 2 . Top-gated field effect transistors fabricated from nanowires oxidized at 700°C had significantly less hysteresis in their subthreshold properties when TCA was added, but oxidation at 900°C with or without TCA provided hysteresis-free devices with improved subthreshold slope. Such enhancements in the electrical properties are expected based on advances in planar silicon process technology and emphasizes the importance of incorporating these techniques for VLS-grown nanowire devices.

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Section: Resultsmentioning

confidence: 99%

Oxidation of silicon nanowires for top-gated field effect transistors

Liu¹,

Wang²,

Ho³

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Our GaN NWs were grown by thermal chemical vapor deposition ͑CVD͒ method 26 and were extensively characterized previously by Tham et al 24,25 This analysis showed that these NWs preferentially grew in the ͓120͔ direction ͑perpen-dicular to the c axis͒ and had smooth surfaces along the growth axis and typically exhibited triangular ͑isosceles͒ cross sections. Most importantly, transmission electron microscopy ͑TEM͒ analysis 24 showed that the NWs contained numerous stacking faults ͑SFs͒ running along the entire NW length parallel to one of the facets ͑the ͑001͒ planes͒.…”

Section: Methodsmentioning

confidence: 99%

“…In Sec. II, we summarize the important characteristics of our GaN NWs based on our previous works 24,25 and describe the experimental "suspended island" technique and sample transfer method. Section III provides theoretical background upon which we draw to analyze and interpret our data.…”

Section: Mingomentioning

confidence: 99%

Unusually low thermal conductivity of gallium nitride nanowires

Guthy

Nam

Fischer

2008

Journal of Applied Physics

101

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We report measurements of thermal conductivity κ on individual gallium nitride nanowires (GaN NWs) with diameters ranging from 97 to 181 nm grown by thermal chemical vapor deposition. We observed unexpectedly small kappa values, in the range of 13-19 W/m K at 300 K, with very weak diameter dependence. We also observe unusual power law κ~T n behavior with n=1.8 at low temperature. Electronenergy-loss-spectroscopy measurements indicate Si and O concentrations in the ranges of 0.1-1 and 0.01-0.1 at. %, respectively. Based on extensive numerical calculations, we conclude that both the unexpectedly low κ and the T 1.8 dependence are caused by unusually large mass-difference scattering, primarily from Si impurities. Our analysis also suggests that mass-difference scattering rates are significantly enhanced by the reduced phonon group velocity in nanoscale systems. Planar defects running the length of the NW, previously characterized in detail, may also play a role in limiting the phonon mean free path. We report measurements of thermal conductivity on individual gallium nitride nanowires ͑GaN NWs͒ with diameters ranging from 97 to 181 nm grown by thermal chemical vapor deposition. We observed unexpectedly small values, in the range of 13-19 W / m K at 300 K, with very weak diameter dependence. We also observe unusual power law ϳ T n behavior with n = 1.8 at low temperature. Electron-energy-loss-spectroscopy measurements indicate Si and O concentrations in the ranges of 0.1-1 and 0.01-0.1 at. %, respectively. Based on extensive numerical calculations, we conclude that both the unexpectedly low and the T 1.8 dependence are caused by unusually large mass-difference scattering, primarily from Si impurities. Our analysis also suggests that mass-difference scattering rates are significantly enhanced by the reduced phonon group velocity in nanoscale systems. Planar defects running the length of the NW, previously characterized in detail, may also play a role in limiting the phonon mean free path.

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“…23,24 There have also been reports of GaN nanowires with a pure zinc-blende structure, 25 as well as reports where a mixture of wurtzite and zincblende phases is observed. 26,27 The possibility that our GaN nanowires were pure phase materials was investigated. The wurtzite diffraction pattern identification was checked against theoretical values for multiple diffraction planes for both [111] zinc-blende and the [001] wurtzite zone axes, as these patterns are very similar.…”

mentioning

confidence: 99%

Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires

et al. 2007

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We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.

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Applications of electron microscopy to the characterization of semiconductor nanowires

Cited by 7 publications

References 46 publications

Oxidation of silicon nanowires for top-gated field effect transistors

Oxidation of silicon nanowires for top-gated field effect transistors

Unusually low thermal conductivity of gallium nitride nanowires

Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires

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