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It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibrated ESD compact model, circuit simulations may be used to identify device-tester interactions that have been reported to cause unexpected damage during ESD testing. The interaction between a snapback device and an ESD tester can be understood in the context of a relaxation oscillator.Index Terms-Circuit simulation, electrostatic discharge (ESD), metal-oxide-semiconductor (MOS) model, reliability.

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