Up to now, all high frequency switching experiments on ferromagnetic semiconductors have involved light induced switching, which is not compatible with integrated circuits. We employed all-electrical techniques to study the response of (Ga,Mn)As to a magnetic field pulse. A field pulse was applied through a coplanar waveguide and the magnetization was read out by anisotropic magnetoresistance. We demonstrated that full magnetization switching by domain wall nucleation and propagation can be triggered by pulses as short as 800ps, combining the effect of the pulsed field and a heat-induced reduction of the coercive field.

No abstract

A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.

The IEC 61000-4-2 test bed is modeled with circuit elements extracted from S-parameter measurements. Simulated current waveforms are consistent with measurement for both battery operated and tethered equipment-under-test without customizing the model parameters for each case.

No abstract