In this work, solution based metal-oxide TFT with BCE structure is successfully implemented in TFT-LCD production line. The well-known slot-die coating technology is used to deposit liquid phase semiconductor on Gen4.5 substrates. Finally, a 5.5 inch TFT LCD driven by solution metal oxide TFT was successfully demonstrated.

In this study, a laser direct patterning process application in benzocyclobutene (BCB) organic dielectric passivation-based amorphous silicon (a-Si) thin film transistor (TFT) device fabrication has been carried out using a KrF excimer laser. A BCB organic photoresist material of 2000 nm with a dielectric constant = 2.7 served as the dielectric passivation layer in our device. Compared with conventional processes, laser direct patterning combining BCB organic photoresist dielectric passivation could eliminate at least four process steps. The etching depth of the BCB organic material passivation layer depends on the laser energy density and number of irradiation shots. The hydrogenated a-Si TFT devices are fabricated by replacing the passivation layer and contact hole patterning process. The mobility and threshold voltage reached 0.16 cm2 V-1 s-1 and -3.5 V, respectively. For TFT device performance, laser direct patterning technology is a potential method of replacing photolithography technology in the application of BCB organic dielectric passivation-based TFT manufacture.

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We have performed the investigation of Ti/TiN barrier layers deposited by PECVD of Ti and CVD of TiN using TiCl 4 as a reactant on a heavily boron doped Si substrate. High contact resistance arose from both the boron out-diffusion, and high chlorine content in the Ti film with respect to the relatively high, and low process temperatures of PECVD-Ti deposition, respectively. In the optimized PECVD-Ti process condition with the satisfied boron dose in the Si substrate, comparable yields can be achieved with that using the 110nm deep trench Dynamic Random Access Memory (DRAM) technology with PVD-Ti method. Furthermore, using PECVD-Ti/CVD-TiN method for the contact metallization, it can obtain a uniform thickness of liner in the hole-type contact with aspect ratio to 6.

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