We report on the amorphous-to-crystalline phase transformation of rubrene thin films. The crystallization of the organic thin films displays disk-like domains whose nucleation and growth follow phase transformation kinetics well-established for inorganic materials under certain time and temperature conditions. We understood that the crystallization of amorphous rubrene thin film shows site-saturated nucleation behavior while the crystalline growth involves both diffusion and interface-controlled kinetics displaying spherulitic disk growth behavior. The activation energy of the transformation kinetics was about 0.78 eV on hexamethyldisilazane-functionalized SiO(2) substrate as mostly consumed at the growth process. The crystallization kinetics changes with the film substrate; more hydrophobic substrate induces a lesser number of crystalline nuclei while causing faster growth of those nuclei.

We propose and demonstrate a photonic phase shifter based a on vector-sum technique that uses polarization-maintaining fibers (PMFs). We achieved a continuous and full phase shift up to 2pi at 30.48 GHz by controlling the polarization state of the light injected into two pieces of PMF of different lengths and applying two different modulator bias voltages.

Harmonic signal generation and frequency upconversion at millimeter-wave bands are experimentally demonstrated by using selective sideband Brillouin amplification induced by stimulated Brillouin scattering in a single-mode fiber. The harmonic signals and frequency upconverted signals are simultaneously generated by the beating of optical sidebands, one of which is Brillouin amplified. By using this method, we successfully demonstrate generation of third-harmonic millimeter waves at 32.55 GHz with f(LO) of 10.85 GHz and upconversion of 10 Mbps quadrature-shift keyed data at f(IF) of 1.55 GHz into a 30 GHz band with more than 17 dB RF power gain.

We report on a low-temperature fabrication of organic-inorganic nanohybrid nonvolatile memory transistors using molecular layer deposition combined with atomic layer deposition. A 3 nm ZnO:Cu charge trap layer is sandwiched between 6 nm tunneling and 20 nm blocking self-assembled organic layers. First, we identify a large memory window of 14.1 V operated at AE15 V using metal-oxidesemiconductor capacitors. Second, we apply the capacitor structure to the nonvolatile memory transistors which operate in the low voltage range of À1 to 3 V. The writing/erasing (+8 V/À12 V) current ratio of $10 3 of the memory transistors is maintained during the static and dynamic retention measurements. The reported organic-inorganic devices offer new opportunities to develop low-voltagedriven flexible memory electronics fabricated at low temperatures. Recently, we have developed a molecular layer deposition (MLD) method for high quality self-assembled organic layers (SAOLs). 24 The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and can be combined with the atomic layer deposition (ALD) method. MLD combined with ALD (MLD-ALD) has been applied to fabricate precisely controlled organic-inorganic nanohybrid superlattices at relatively low temperatures. [24][25][26] Here we report on the low-temperature fabrication of organicinorganic nanohybrid floating-gate nonvolatile memory transistors (NMTs) using the MLD-ALD method with ZnO:Cu as a charge trap layer, AlOx-SAOLs as blocking and tunneling layers, and zinc oxide cross-linked polydiacetylene (ZnOPDA) as a semiconducting layer. Note that the organic-inorganic

The change in expression of neurotrophic factors in KC may suggest that these factors play an important role in the pathogenesis of KC and serve as new markers for the progression of KC.