Summary: Photobleachable deep UV resists were designed by introducing diazoketo groups in polymer side chains. The diazoketo groups undergo the Wolff rearrangement upon irradiation in the deep UV, affording ketenes that react with water to provide base‐soluble photoproducts. The polymers were synthesized by radical copolymerization of 2‐(2‐diazo‐3‐oxo‐butyryloxy)‐ethyl methacrylate, 2‐hydroxyethyl methacrylate, and γ‐butyrolacton‐2‐yl methacrylate. The single component resist showed 0.7 µm line and space patterns using a mercury‐xenon lamp in a contact printing mode.Scanning electron micrograph of 0.7 µm line and space patterns printed with polymer B at a dose of 70 mJ · cm−2.imageScanning electron micrograph of 0.7 µm line and space patterns printed with polymer B at a dose of 70 mJ · cm−2.

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