The field of skyrmionics has been actively investigated across a wide range of topics during the last decade. In this topical review, we review and discuss key results and findings in skyrmionics since the first experimental observation of magnetic skyrmions in 2009. We particularly focus on the theoretical, computational and experimental findings and advances that are directly relevant to the spintronic applications based on magnetic skyrmions, i.e. their writing, deleting, reading and processing driven by magnetic field, electric current and thermal energy. We then review several potential applications including information storage, logic computing gates and non-conventional devices such as neuromorphic computing devices. Finally, we discuss possible future research directions on magnetic skyrmions, which also cover rich topics on other topological textures such as antiskyrmions and bimerons in antiferromagnets and frustrated magnets.

Since the experimental discovery of magnetic skyrmions achieved one decade ago 1 , there have been significant efforts to bring the virtual particles into all-electrical fully functional devices, inspired by their fascinating physical and topological properties suitable for future low-power electronics 2 . Here, we experimentally demonstrate such a deviceelectrically-operating skyrmion-based artificial synaptic device designed for neuromorphic computing. We present that controlled current-induced creation, motion, detection and deletion of skyrmions in ferrimagnetic multilayers can be harnessed in a single device at room temperature to imitate the behaviors of biological synapses. Using simulations, we demonstrate that such skyrmion-based synapses could be used to perform neuromorphic pattern-recognition computing using handwritten recognition data set, reaching to the accuracy of ~89%, comparable to the software-based training accuracy of ~94%. Chip-level simulation then highlights the potential of skyrmion synapse compared to existing technologies. Our findings experimentally illustrate the basic concepts of skyrmion-based fully functional electronic devices while providing a new building block in the emerging field of spintronics-based bio-inspired computing.

Magnetic skyrmions are swirling magnetic textures with novel characteristics suitable for future spintronic and topological applications. Recent studies confirmed the room-temperature stabilization of skyrmions in ultrathin ferromagnets. However, such ferromagnetic skyrmions show an undesirable topological effect, the skyrmion Hall effect, which leads to their current-driven motion towards device edges, where skyrmions could easily be annihilated by topographic defects. Recent theoretical studies have predicted enhanced current-driven behavior for antiferromagnetically exchange-coupled skyrmions. Here we present the stabilization of these skyrmions and their current-driven dynamics in ferrimagnetic GdFeCo films. By utilizing element-specific X-ray imaging, we find that the skyrmions in the Gd and FeCo sublayers are antiferromagnetically exchange-coupled. We further confirm that ferrimagnetic skyrmions can move at a velocity of ~50 m s−1 with reduced skyrmion Hall angle, |θSkHE| ~ 20°. Our findings open the door to ferrimagnetic and antiferromagnetic skyrmionics while providing key experimental evidences of recent theoretical studies.

Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting, suggesting the potential to integrate these polymorphs as circuit components in two-dimensional electronic circuitry. Developing a selective and sequential growth strategy for such two-dimensional polymorphs in the vapour phase is a critical step in this endeavour. Here, we report on the polymorphic integration of distinct metallic (1T') and semiconducting (2H) MoTe crystals within the same atomic planes by heteroepitaxy. The realized polymorphic coplanar contact is atomically coherent, and its barrier potential is spatially tight-confined over a length of only a few nanometres, with a lowest contact barrier height of ∼25 meV. We also demonstrate the generality of our synthetic integration approach for other TMDC polymorph films with large areas.