The present study investigated the Mg doping effect in the gallium nitride (GaN) buffer layers (BLs) of AlGaN/GaN high-electron-mobility transistor (HEMT) structures grown on semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition. When the Mg concentration was increased from 3 × 1017 to 8 × 1018 cm−3, the crystal quality slightly deteriorated, whereas electrical properties were significantly changed. The buffer leakage increased approximately 50 times from 0.77 to 39.2 nA at −50 V with the Mg doping concentration. The Mg-compensation effect and electron trapping effect were observed at Mg concentration of 3 × 1017 and 8 × 1018 cm−3, respectively, which were confirmed by an isolation leakage current test and low-temperature photoluminescence. When the BL was compensated, the two-dimensional electron gas (2DEG) mobility and sheet carrier concentration of the HEMTs were 1560 cm2 V−1 s−1 and 5.06 × 1012 cm−2, respectively. As a result, Mg-doped GaN BLs were demonstrated as a candidates of semi-insulating BLs for AlGaN/GaN HEMT.

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PURPOSES :The purpose of this article is to investigate the predicted life of jointed concrete pavement (JCP) with two variables effecting on axle load spectra (ALS). The first variable is different data acquisition methods whether using high-speed weigh-in-motion (HS-WIM) or not and the other one is spectra distribution due to overweight enforcement on main-lane of expressway using HS-WIM. METHODS : Three sets of ALS had been collected i) ALS provided by Korea Pavement Research Program (KPRP), which had beenobtained without using HS-WIM ii) ALS collected by HS-WIM before the enforcement at Kimcheon and Seonsan site iii) ALS collected after the enforcement at the same sites. And all ALS had been classified into twelve vehicle classes and four axle types to compare each other. Among the vehicle classes, class 6, 7, 10 and 12 were selected as the major target for comparing each ALS because these were considered as the primary trucks with a high rate of overweight loading. In order to analyze the performance of JCP based on pavement life, fatigue crack and International Roughness Index (IRI) were predicted using road pavement design program developed by KPRP and each ALS with same annual average daily traffic (AADT) was applied to design slab thickness.

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This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the Al(x)Ga(1-x)N buffer layer.