AbsLracLThe CuFeEz ternary mmpound with a layered crystalline structure has teen ludied. nre mmpound Cr paramagnetic in lhc temperature range IO-ZM) K Invesligation of the p ( T ) temperature dependence demonstrates the fermn character of the carrier transpon with the Molt diffusional mechanism. ?he obtained power dependences n ( T ) , R ( T ) and o ( T ) allow us LO mnclude lhal CuFeTe belongs LO the gapless semiconductors. rile temperature behaviour of n(T), R ( T ) and o(T) can be explained by examining features from the electron spectrum of CuFeTez under mndilions where the characrer of the ~a n i e r

The temperature.dependences of the Hail coefficient R(T), specific conductivity a(T), and electron concentration n(TJ of CuFeS, and CuFeTe, monocrystals are investigated. From their power dependences the zero bandgap for the electron excitations of these substances is established. Analysis of the temperature dependence of the mobility p(7) enables u s to conclude that the conduction electrons are in t h e magnetopoiaron (ferron) state of large and small radius in CuFeS, and CuFeTq respectively. The existence of various power dependences R(T), u(5) and n(T) in CuFe.Al, -.& solid solutions, in the CuFeS, compound, which is under pressure, and in the CuFeTe, compound, is pointed out. These anomalies are explained both by the manifestation of peculiarities of the ferron spectrum and by various mechanisms of ferron mobility. It is pointed out that the theoretical group analysis of the CuFeS, structure corroborates the possibility of the existence of the zero-gap state at the P point of the Briliouin zone. Some peculiarities of the zero-gap spectra of the both substances are discussed.

Among the numerous magnetic semiconductors there is a family of ternary compounds MnX11Te4. For the first time the optical and electrical parameters of these materials as well as the methods of preparing of the diode structures were presented in works (AVERXJRVA et al. ; BEKIMRETOV e t al.). Investigations of the optical, electronic, photoelectric and luminescence properties of the ternary compounds MniIITe, with the magnetic

No abstract

The ternary compound ZnSnSb2 was considered as hypothetical for a long time In this work the electric conductivity 6, the Hall coefficient R, and the differential thermal e. m. f. 6 of ZnSnSb were investigated. The probes ensured nonrectifying low-ohmic contact. All crystals investigated had p-type conductivity and a high carr i e r concentration ( w lo2' ~m -~) , which limited obtaining information on the physical properties of this compound. 2The Hall coefficient remained practically constant between liquid nitrogen and 0 room temperature. The maximurn of R near T = 200 to 250 K. which was observed in many ternary compounds with ordered structures because of two sorts of holes (l), was absent in our case probably due to a very high carrier concentration. The conductivity 6 was 2000 to 3000 P-lcm-l, and the mobility U = 6 ' R was 50 to 70 cm /Vs. Near 100 O K 6 had a small maximum and decreased with increasing