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Articles you may be interested inIn situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxy

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DC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.