The thermal evaporation system type (Edwards) has been used to evaporate high purity (99.9 %) silver on glass, n-and p-type silicon and porous silicon substrates at room temperature under low pressure (about 10 -6 torr) for different thickness (50, 75, 100, 125 and 150 nm). Using a rapid thermal oxidation of Ag film at oxidation temperature 350°C and different oxidation times, Ag 2 O thin film was prepared. The structural properties of Ag 2 O film were investigated and compared with other published results. The structural investigation showed that the films formed at thickness 100 nm showed (111) strong reflection along with weak reflections of (101) corresponding to the growth of single phase Ag 2 O with cubic structure. Dark and illuminated I-V of p-Ag 2 O/p-Si, p-Ag 2 O/n-Si, Al/p-PSi/Al, Al/n-PSi/Al, p-Ag 2 O/p-PSi/c-Si and p-Ag 2 O/n-PSi/c-Si heterojunction were investigated, discussed and prepared at optimum condition (oxidation temperature 350°C and 90 s oxidation time with thickness 100 nm). Ohmic contacts were fabricated by evaporating 99.999 purity silver wires for back and aluminum wires for front contact, respectively.

In the recent years TiO2 films are extensively studied because of their interesting chemical, optical and electrical properties. In the researcher work, TiO2 thin films have received great attention, because of having excellent photocatalytic and antibacterial properties when exposed to UV light (320 – 400 nm). TiO2 films spectra have maximum transmission at (900 nm) and exhibit high visible transmittance, up to 78 %, for 150 nm, which decreased slightly to 61.4 % for 450 nm. When wavelength decreases the absorptance will increase. The absorption coefficient is increasing with thickness decreasing (the probability of occurrence direct transition). From the light scattering effect for its high surface roughness the formation stage of anatase was appear with increase in grain size and density of layers. The refractive index increases with thickness increasing, and then the enhancement of growth crystalline. It have found a wide range of applications in various fields like photocatalysis, antibacterial and protective coatings, antireflecting coatings, etc.

Crystalline structure of a sample of Alumina (Al2O3 – reinforced epoxy) at (4% and 8%) has two prominent peaks at point (17°) and (19.5°) with miller vectors (111) and (220), respectively. These results are corresponding to crystalline cubic and notes growing of crystallization. The spectrum of (XRD) showed increase in crystalline size which means an increase in randomization and a lack of crystallization amorphous at (6%) (Al2O3). This result showed increase in crystalline size which means an increase in randomization and a lack of crystallization amorphous. Epoxy matrix reinforced by particles of silica (SiO2) and alumina (Al2O3) with different fractions were investigated for electrical properties such as dielectric constant, conductivity and dielectric loss index. This result showed effect of additional (SiO2, Al2O3) is small concentration except (2% SiO2) has large effect.

In this works, CdTe was deposited on glass and Si substrates using thermal evaporation techniques. CdTe has been investigated from the properties (structural, surface morphological, optical and electrical). XRD analyses found the monocrystallite, cubic structure of the CdTe thin film and there is no trace of the other material. UV-Vis measurements indicate that 1.51 eV was found the energy gap of the CdTe thin film. Ag/CdTe/Si/Ag The heterojunction Photodetector has two response peaks located at 450 nm and 900 nm with a maximum sensitivity and detectivity of Ag/CdTe/Si/Ag 0.22 A/W and 3.1×1012 respectively.