Hydrogenated amorphous carbon films have been prepared from CH4, H2, and Ar mixtures by plasma-enhanced chemical-vapor deposition. Films with various physical properties were obtained from different deposition conditions. The deposition parameters varied included H2 flow rates, Ar flow rates, total pressures, substrate temperatures, and power densities. Effects of each deposition parameter on the microstructures and the kinetics involved in the formation of each film are discussed. In addition, relations between deposition conditions, microstructures, and the optical properties are reported.

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Characterization of amorphous hydrogenated carbon nitride films prepared by plasma-enhanced chemical vapor deposition using a helical resonator discharge

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The erasing mechanisms of Ag–In–Sb–Te Compact Disk (CD)-Rewritable at CD 2X and CD 4X are studied by employing the transmission electron microscopy (TEM). The mechanisms of laser-induced crystallization vary with linear velocity as well as erase power. Under CD 2X recording, erasing is proceeded with nucleation and growth mechanism at low erase laser power. However, it is the direct grain growth that controls the mechanism of erasing at higher erase power. Under CD 4X recording, the erasing is dominated by direct grain growth originated from the interface between amorphous marks and their neighboring crystalline region, and the erase power determines the location where the grain growth begins.