Effects of argon ion bombardment on the microstructures and electrical conductivities of hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition

Abstract

Characterization of amorphous hydrogenated carbon nitride films prepared by plasma-enhanced chemical vapor deposition using a helical resonator discharge

High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits

“…• General properties of carbon-and fluorine-doped carbon films* As mentioned previously, the development of low-k dielectric materials is of current interest in attempting to improve the performance of integrated circuits. Both conventional plasma CVD and HDP CVD carbon and F-doped carbon (F-C x ) films have been identified as excellent candidates for low-k dielectric materials for multilayer interconnections at ULSI levels of integration [16,[65][66][67].…”

“…The dielectric constants of those carbon and fluorocarbon films are reported in the range of 2.0 to 3.3, with carbon films in the upper range and fluorocarbon films in the lower range. The carbon and fluorocarbon films are generally deposited with individual precursors or a combination of various types of hydrocarbon and fluorocarbon precursors such as methane (CH 4 ), ethylene (C 2 H 4 ), CF 4 , C 2 F 6 , C4F 8 , CHF 3 with Ar and hydrogen [10,12,13,15,16,[65][66][67][68]. Other ring-type hydrocarbon fluorocarbon compounds such as benzene (C 6 H6), difluorobenzene (C 6 F 4 H 2 ), and hexafluorobenzene (C 6 F 6 ) [11,69], and even oxygenated fluorocarbon such as hexafluoropropylene oxide (HFPO, C 3 F 6 O) [14] have also been used as precursors.…”

“…For low-k dielectric carbon films, controlling the ion bombardment and film bonding structures drastically affects the k value [11,13,67]. It should be noted that the rf power and processing temperature are generally much lower than in the HDP CVD process used in diamondlike carbon deposition [70].…”

“…), bonding (sp 3 vs. sp 2 bonding), density, and composition (H/C ratio). Films with more sp 2 bonding and a higher H/C ratio tend to have a lower k value and less thermal stability [11,67] compared to those with more sp 3 bonding. The optimization of film adhesion, thermal and chemical stability, film stress, and k value has been investigated [11,13,16].…”

Effect of Ar Ion Beam Pre-Treatment of Poly(ethylene terephthalate) Substrate on the Mechanical and Electrical Stability of Flexible InSnO Films Grown by Roll-to-Roll Sputtering System

“…In our experiment the oxygen inflow was completely excluded during the Ar ion beam irradiation, the chemical states changes at the film surface can be interpreted as a consequence from the energetic Ar ion particle bombardment. 16,17) Therefore, it can be thought that the energetic Ar ion particles effectively modified the metal-stable chemical states at PET polymer surface related to C¼O, C-O states, and thus offered the hydrophilic functional groups at the PET surface. 17,18,21,22) To investigate the mechanical stability and flexibility of the R2R sputtered ITO films on a PET substrate before and after Ar ion beam treatment, a laboratory-made bending test system was employed as shown in Fig.…”