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Line width r oughness ( LWR) co ntrol is a cr itical issu e in ex treme ultraviolet lit hography ( EUVL). The difficulty o f co ntrolling L WR an d th e n eed to m inimize it h ave g rown as th e sen sitivity o f materials an d resolution in the resist patterning process has improved. An other critical feature that has become difficult to control in EUVL and 22nm half-pitch systems is pattern collapse. The increase of aspect ratio that comes from further s caling pro motes th e onset of pattern collaps e. B oth pattern collaps e an d LWR are eas ily obs erved in EUVL and leading-edge ArF immersion lithography. This p aper w ill d emonstrate recen t g ains in LWR co ntrol in lead ing EUV fil ms u sing track -based p rocesses, etch-based i mprovements, and th e results o f co mbined tec hniques. Also the use of a newly developed EUVspecific F IRM™ ri nse c hemistry t o redu ce pat tern col lapse will be di scussed al ong with fu ture dev elopment activities and industry requirements for both LWR and pattern collapse.

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