Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Koh, Chawon; Georger, Jacque H.; Ren, Liping; Huang, George; Goodwin, Frank; Wurm, Stefan; Ashworth, Dominic; Montgomery, Warren; Pierson, Bill; Park, Joo-On; Naulleau, Patrick

doi:10.1117/12.846629

Cited by 19 publications

(13 citation statements)

References 9 publications

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“…As state‐of‐the‐art molecular glass resists exhibit high glass transition temperatures (>100 °C) and etch resistances comparable to polymeric compounds they are becoming increasingly interesting materials for industry. This industrial potential is reflected by the fact that 5% of the research portfolios of extreme ultraviolet resist suppliers were dedicated to molecular glass resists in 2009 12. Among various molecular glass resist matrix materials dendritic13 and star shaped glass formers14 as well as calix[n]arene derivatives4, 15 have been published.…”

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confidence: 99%

Combinatorial Optimization of a Molecular Glass Photoresist System for Electron Beam Lithography

et al. 2011

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Electron beam lithography is a powerful technique for the production of nanostructures but pattern quality depends on numerous interacting process variables. Orthogonal gradients of resist composition, baking temperatures, and development time as well as dose variations inside writing fields are used to prepare ternary combinatorial libraries for an efficient stepwise optimization of a molecular glass negative tone resist system.

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confidence: 99%

Combinatorial Optimization of a Molecular Glass Photoresist System for Electron Beam Lithography

et al. 2011

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“…Currently, best resolution for small field exposure is about 20 nm, and the printed pattern half pitch size on full field tool is a little larger because of the lower NA of the systems. Figure 6 shows a 26 nm device image exposed using a NXE tool [96], and Figure 7 shows sub-20 nm resolution images exposed using an AD tool [97]. Figure 7(a) shows an 18-nm half-pitch resolution and the other two images (Figure 7(b) and (c)) are at 16-nm half-pitch resolution with a 40-nm-thick imaging depth.…”

Section: Resistmentioning

confidence: 97%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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“…1,2 It is expected that EUV resists must simultaneously pattern 20 nm half pitch with a LWR of less than 1.5 nm (3 ) and a sensitivity < 10 mJ/cm 2 . 3 In earlier work, 4,5 we reported the role of the protecting group, EUV sensitization, and the fundamental performance differences between a PBP system versus the traditional PAG blended resist system. We also previously reported on the reaction kinetics of the individual resist monomers, optimization of PAG incorporation into the polymer, and finally optimization of the PAG cation to reduce the effects of out-of-band radiation (OOB).…”

Section: Introductionmentioning

confidence: 97%

High sensitivity chemically amplified EUV resists through enhanced EUV absorption

Ongayi¹,

Christianson

Meyer

et al. 2012

SPIE Proceedings

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Resolution, line edge roughness, sensitivity and low outgassing are the key focus points for extreme ultraviolet (EUV) resist materials. Sensitivity has become increasingly important so as to address throughput concerns in device manufacturing and compensate for the low power of EUV sources. Recent studies have shown that increasing the polymer linear absorption absorption coefficient in EUV resists translates to higher acid generation efficiency and good pattern formation. In this study, novel high absorbing polymer platforms are evaluated. The contributing effect of the novel absorbing chromophore to the resultant chemically amplified photoresist is evaluated and comparedwith a standard methacrylate PAG Bound Polymer (PBP) platform. We report that by increasing EUV absorption, we cleanly resolved 17 nm 1:1 line space can be achieved at a sensitivity of 14.5 mJ/cm 2 , which is consistent with dose requirements dictated by the ITRS roadmap. We also probe the effect of fluorinated small molecule additives on acid yield generation (Dil C) at EUV of a PBP platform.

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Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Cited by 19 publications

References 9 publications

Combinatorial Optimization of a Molecular Glass Photoresist System for Electron Beam Lithography

Combinatorial Optimization of a Molecular Glass Photoresist System for Electron Beam Lithography

Next-generation lithography for 22 and 16 nm technology nodes and beyond

High sensitivity chemically amplified EUV resists through enhanced EUV absorption

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