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Resolution, line edge roughness, sensitivity and low outgassing are the key focus points for extreme ultraviolet (EUV) resist materials. Sensitivity has become increasingly important so as to address throughput concerns in device manufacturing and compensate for the low power of EUV sources. Recent studies have shown that increasing the polymer linear absorption absorption coefficient in EUV resists translates to higher acid generation efficiency and good pattern formation. In this study, novel high absorbing polymer platforms are evaluated. The contributing effect of the novel absorbing chromophore to the resultant chemically amplified photoresist is evaluated and comparedwith a standard methacrylate PAG Bound Polymer (PBP) platform. We report that by increasing EUV absorption, we cleanly resolved 17 nm 1:1 line space can be achieved at a sensitivity of 14.5 mJ/cm 2 , which is consistent with dose requirements dictated by the ITRS roadmap. We also probe the effect of fluorinated small molecule additives on acid yield generation (Dil C) at EUV of a PBP platform.

This paper will discuss further progress obtained at Dow for the improvement of the Resolution, Contact critical dimension uniformity(CDU), and Sensitivity of EUV chemically amplified resists. For resolution, we have employed the use of polymer-bound photoacid generator (PBP) concept to reduce the intrinsic acid diffusion that limits the ultimate resolving capability of CA resists. For CDU, we have focused on intrinsic dissolution contrast and have found that the photo-decomposable base (PDB) concept can be successfully employed. With the use of a PDB, we can reduce CDU variation at a lower exposure energy. For sensitivity, we have focused on more efficient EUV photon capture through increased EUV absorption, as well as more highly efficient PAGs for greater acid generating efficiency. The formulation concepts will be confirmed using Prolith stochastic resist modeling. For the 26nm hp contact holes, we get excellent overall process window with over 280nm depth of focus for a 10% exposure latitude Process window. The 1sigma Critical dimension uniformity [CDU] is 1.1 nm. We also obtain 20nm hp contact resolution in one of our new EUV resists.

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