bilayer structures, fabricated by atomic layer deposition at 200°C and post-deposition annealing, were studied in Pt bottom electrode (Pt-BE)/insulator/Pt top electrode (Pt-TE) capacitors. The Pt-BE/ Al 2 O 3 /TiO 2 /Pt-TE capacitor exhibits stable bipolar resistive switching with an on-resistance/off-resistance ratio of >10 2 controlled by a small voltage of +0.8 V. The forming process occurs in two steps of breaking of the Al 2 O 3 layer and transfer of oxygen vacancies (V O ) into the TiO 2 layer. The capacitor showed poor endurance, particularly in the high-resistance state under vacuum conditions. This indicates that the insulating TiO 2 layer without V O is not formed near the Al 2 O 3 layer because oxygen cannot be introduced from the exterior. On the other hand, in the Pt-BE/TiO 2 / Al 2 O 3 /Pt-TE capacitor, multilevel resistive switching with several applied voltage-dependent nonvolatile states is observed. The switching mechanism corresponds to the Al 2 O 3 layer's trapped V O concentration, which is controlled by varying the applied voltage.
Интерес к эффектам переключения сопротивления в наноразмерных пленках, как правило, оксидов переходных металлов, возник достаточно давно и стимулирован сравнительно недавней публикацией сотрудников Hewlett-Packard Д.Струкова, Р.C.Вильямса и др. (Nature, 2008), объявивших об обнаружении "неуловимого" мемристора -резистора с памятью (memory resistor), теоретически предсказанного в 1971 году Л.Чуа. Это открыло серьезные перспективы создания резистивной памяти произвольного доступа (ReRAM), в ячейках которой данные сохраняются за счет изменения сопротивления материала, а не электрического заряда. The effects of resistance switching in nanoscale films, as a rule, made of transition metal oxides has long gained considerable interest, which was fostered by a relatively recent publication of Hewlett-Packard's employees, D.Strukov, R.C. Williams, et al. (Nature, 2008), who declared about the discovery of the "ever-elusive" memristor, or memory resistor, which had been theoretically predicted in 1971 by L. Chua. This opened up large prospects for creating resistance based random access memory (ReRAM) with the cells storing data by modifying the resistance of the material rather than an electric charge.
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