h i g h l i g h t sA continuously stirred tank reactor was used to synthesize the precursor. Ammonia content has a significant effect on both the primary particle size and morphology of agglomerates. Li-and Mn-rich composite cathode materials synthesized based on these hydroxide precursors have a better tolerance to lithium. a b s t r a c tNickel manganese hydroxide co-precipitation inside a continuous stirred tank reactor was studied with sodium hydroxide and ammonium hydroxide as the precipitation agents. The ammonium hydroxide concentration had an effect on the primary and secondary particle evolution. The two-step precipitation mechanism proposed earlier was experimentally confirmed. In cell tests, Li-and Mn-rich composite cathode materials based on the hydroxide precursors demonstrated good electrochemical performance in terms of cycle life over a wide range of lithium content.

In situ synchrotron radiation measurements of porous silicon (PS) strain have been performed during ultrahigh vacuum (UHV) thermal annealing. For a p+ sample, the initial lattice expansion shifts toward a contraction above 270 °C in relation with hydrogen desorption. For a p− sample, the strain variation is similar to that of a p+ one, but with effects five times larger: after hydrogen desorption, the contraction strain is large (>1.5%) and inhomogeneous. In both cases, most of these strains are elastic as an HF etch re-establishes the initial expansion with a narrow diffraction peak. For p+ samples, the lattice constant exhibited a slow variation during subsequent exposure to air due to a slow oxidation of the annealed porous samples. The origin of these strain variations is discussed in relation with the presence of hydrogen or oxide coverage. The observation of similar variations in other PS properties is also discussed. Finally, the absence of a strain effect during the introduction of water vapor in UHV is discussed as possibly due to a contamination of the PS sample by residual water during the long time passed under UHV at high temperature.

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