Visible light emission at room temperature from partially oxidized amorphous silicon

Bustarret, Étienne; Ligeon, M.; Ortega, Luis H.

doi:10.1016/0038-1098(92)90039-c

Cited by 72 publications

(18 citation statements)

References 16 publications

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“…This result indicates for the first time that the luminescence properties of Si materials can be improved by quantum confinement of carriers in low-dimensional structures. Subsequently, similar visible PL was observed in porous amorphous Si nanostructures [2][3][4][5]. For Si nanocrystals, many models have been suggested to elucidate their strong luminescence origins.…”

Section: Introductionmentioning

confidence: 59%

“…For amorphous Si nanoparticles, their luminescence mechanism is still in controversy so far. Some experimental data and theoretical investigations suggested that amorphous Si nanostructures are subjected to quantum confinement effect [6][7][8], while others showed that the short mean free path, order of 1 nm, of amorphous Si is responsible for no quantum confinement effect [2,4,9]. In addition, it was found that the quantum confinement mechanism alone cannot be used to explain the influence of various surface treatments and surrounding media on the luminescence properties [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Luminescence properties of ultrasmall amorphous Si nanoparticles with sizes smaller than 2nm

Xie

Qiu

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Luminescence properties of ultrasmall amorphous Si nanoparticles with sizes smaller than 2nm

Xie

Qiu

et al. 2007

Journal of Crystal Growth

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“…They have shown potential use as a bright blue light-emitting diode [52]. Polycrystalline [53] and amorphous [54,55] silicon can also be porosified in HF. However, for polysilicon the etching rate depends on the crystal orientation and is enhanced at grain boundaries.…”

Section: Historymentioning

confidence: 99%

Electrochemical pore formation onto semiconductor surfaces

Santinacci¹,

Djenizian²

2008

Comptes Rendus. Chimie

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“…Finally, we show in Fig. 8 a comparison of ODMR spectra of porous Si samples prepared in different laboratories and starting from different substrate materials, including heavily doped amorphous silicon [3]. In all cases, the main features of the triplet O D M R spectrum and the defect-related quenching line are identical.…”

Section: Resultsmentioning

confidence: 95%

Radiative and Nonradiative Recombination in Porous Silicon. What Can We Learn from Spin Resonance?

Stutzmann

Brandt

1995

Physica Status Solidi (b)

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Recent results of spin-resonance investigations of porous silicon are presented. Special attention is given to nonradiative and radiative recombination processes as detected by spin-dependent recombination (spin-dependent photoconductivity, SDPC, and optically detected magnetic resonance, ODMR). P,-like defects are identified as the main recombination centers which quench both photoconductivity and visible photoluminescence in porous Si. Strongly localized triplet excitons are found as the initial states of visible luminescence. IntroductionIn many cases, electron spin resonance (ESR) and related techniques have been instrumental in clarifying details of recombination processes in semiconductors and insulators. Particularly informative are combinations of spin resonance with photoconductivity (spindependent photoconductivity, SDPC) and luminescence (optically detected magnetic resonance, ODMR) which make use of spin-selection rules for radiative and nonradiative transitions involving paramagnetic states with electronic spin S =I= 0. In a simple picture, the final state of recombination is a doubly occupied, diamagnetic (S = 0) state according to the Pauli principle. The excited state prior to the recombination can be a parallel (S = 1, triplet state) or antiparallel (S = 0, singlet) combination of the electron and hole spins, respectively. Thus, if we neglect changes in the orbital momentum L for the sake of simplicity, nonradiative recombination can only occur out of the singlet state, since phonons have no spin, whereas radiative recombination occurs out of the triplet state to account for the orbital momentum J = 1 carried away by the emitted photon. In spin resonance the induced spin-flips of either the electron or hole state effectively change singlet into triplet combinations and vice versa, thereby also modulating the lifetime of the excited state. This modulation is finally detected as a small, resonant decrease or increase of the photoconductivity and the luminescence, which constitutes the measured signal.

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Visible light emission at room temperature from partially oxidized amorphous silicon

Cited by 72 publications

References 16 publications

Luminescence properties of ultrasmall amorphous Si nanoparticles with sizes smaller than 2nm

Luminescence properties of ultrasmall amorphous Si nanoparticles with sizes smaller than 2nm

Electrochemical pore formation onto semiconductor surfaces

Radiative and Nonradiative Recombination in Porous Silicon. What Can We Learn from Spin Resonance?

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