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The diffusion of hydrogen in metals is of interest due to the deleterious influence of hydrogen on material ductility and fracture resistance. It is becoming increasingly clear that hydrogen transport couples significantly with dislocation activity. In this work, we employ a coupled diffusion-crystal plasticity model to incorporate hydrogen transport associated with dislocation sweeping and pipe diffusion in addition to standard lattice diffusion. Moreover, we consider generation of vacancies via plastic deformation and stabilization of vacancies via trapping of hydrogen. The proposed hydrogen transport model is implemented in a physically-based crystal viscoplasticity framework to model the interaction of dislocation substructure and hydrogen migration. In this study, focus is placed on hydrogen transport and trapping within the intense deformation field of a crack tip plastic zone. We discuss the implications of the model results in terms of constitutive relations that incorporate hydrogen effects on crack tip field behavior and enable exploration of hydrogen embrittlement mechanisms.

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The ability of quinhydrone/methanol solutions to electrically passivate silicon surfaces with respect to minority carrier recombination has been confirmed. The p-benzoquinon has been found to be the active component of quinhydrone. It is the presence of ketones on opposite sides of the ring that acts to passivate the surface, although the exact mechanism of passivation is not understood. The time dependence of the passivation suggests that it includes more than merely repairing damage on hydrogen terminated surfaces.

The structure and conformations of 1,2-dimethoxycyclobutene-3,4-dione in the vapor at a temperature of 185 °C have been measured by gas-phase electron diffraction. The molecule exists in two forms, one of symmetry C2v with the methyl groups trans to the double bond, and one of Cs symmetry with a methyl group cis and the other trans to this bond (these forms hereafter designated as trans and cis). The molar ratio trans/cis is 68/32 with a 2σ uncertainty of about 24. Many of the parameter values for the two forms are very nearly alike and could not be measured experimentally. With the adoption of parameter differences calculated at the B3LYP/cc-pVTZ level, the following bond distances (r(g)/Å) and bond angles (∠/deg) with estimated 2σ uncertainties were obtained for trans/cis: C1═C2 = 1.381(9)/1.381, C1-C4 = 1.493(11)/1.495, C3-C4 = 1.543(20)/1.545, C═O = 1.203(4)/⟨1.200⟩, C1-O = 1.316(6)/⟨1.320⟩, O-CH3 = 1.444(9)/⟨1.443⟩, C═C-C3 = 93.1(5)/⟨93.1⟩, C3-C4═O = 136.7(29)/⟨136.9⟩, C═C-O = 131.0(23)/137.5, and 131.8, C-O-C = 117.2(12)/118.2 and 116.9; the individual angle values for the cis form listed as averages differ very little. The bond distances and bond angles are in excellent qualitative agreement with prediction based on conventional ideas about the effects of conjugation and hybridization, and their relative values agree very well with predictions from quantum mechanical calculations.