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The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology Lire presented. Such switches have demonstrated state-of-the-art performance: they exhibit I dB on-state insertion loss and better than 37 dB isolation. power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz

In this article, the design, fabrication, and on-wafer test of X-Band and 2-18 GHz wideband high-power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state-of-the-art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X-band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth.

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