Low temperature photoluminescence and Auger electron spectroscopy have been used to study chemical-vapor deposited SiO2 and SigN4 layers as encapsulants for high temperature annealing of GaAs. Silicon dioxide or silicon oxynitride layers allow out-diffusion of Ga, while suitably prepared rf plasma deposited SisN4 layers can be used to anneal GaAs with negligible Ga outdiffusion.
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